An Investigation of Gate Voltage Oscillation and its Suppression for SiC MOSFET

Zhang, Weichi; Wang, Xiang; Dahidah, Mohamed; Pickert, Volker; Elgendy, Mohammed A.

doi:10.1109/access.2020.3008940

Cited by 22 publications

(10 citation statements)

References 22 publications

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“…1) For MOV-based SSCBs, gate-source voltage distortion during turn-off is a critical limitation, which leads to false triggering events of SSCB, causing gate-oxide degradation and failure in long term. The gate source voltage distortions couple with both high turn-off dv/dt through Miller capacitance and high turn-off di/dt through common source impedance, which has been revealed in existing literatures [19], [20].…”

Section: Introductionmentioning

confidence: 95%

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Investigation of Limitations in Passive Voltage Clamping-Based Solid-State DC Circuit Breakers

Zhao

Kheirollahi

Wang

et al. 2022

IEEE Open J. Power Electron.

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This paper investigates limitations of passive voltage clamping based dc solid-state circuit breakers (SSCBs). There are two major contributions of this paper. First, it presents a unique quantifying study of limitations in metal oxide varistor (MOV) clamping based SSCBs in terms of gate voltage distortions and power shock. Second, it provides a comprehensive quantifying investigation of limitations in MOV and resistor-capacitor-diode (MOV-RCD) clamping based SSCBs regarding the power shock and response speed. For MOV based SSCBs, both gate voltage distortions and power shock during turn-off are extremely high, causing switch degradation/failure. For MOV-RCD clamping based SSCBs, a snubber capacitor is added to reduce dv/dt and power shock. However, this capacitor brings two main limitations: a) inevitable high transient power/energy shock at high-current interruption and b) low turn-off speed caused by high-inertia capacitor charging at low-current interruption. Two prototypes are implemented to illustrate limitations: a discrete SiC MOSFET-based 500 V/20 A SSCB, and a SiC MOSFET module-based 800V/100A SSCB. Experiments validate that the transient power shock can reach 256 kW at a 1.2 kA fault current interruption, which affects system reliability. Moreover, the response speed at a 100 A case (7.8 μs) can be 14 times slower than the 1 kA case (0.56 μs) due to the snubber capacitor charging process, which leads to inconsistent control and coordination of SSCBs.

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Section: Introductionmentioning

confidence: 95%

“…To suppress the gate voltage distortions, strategies such as adding gate loop resistance and capacitance, and negative biased turn-off have been proposed. However, those passive methods have limited distortion mitigation effect [21] and are not necessarily effective for SSCB applications [20], [22].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Limitations in Passive Voltage Clamping-Based Solid-State DC Circuit Breakers

Zhao

Kheirollahi

Wang

et al. 2022

IEEE Open J. Power Electron.

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“…The whole leg is compacted within a single power module, thus leading to a more straightforward layout of the power circuit and high cooling capabilities. However, as high dv/dt ratios characterize such power devices, driver design is not trivial [14,[27][28][29]. Finally, even though SiC power devices reaching as high as 15 kV have been shown in the literature [30], commercially available transistors with reasonable current ratings are still limited to 3.3 kV, and thus such a simple approach is not applicable for higher voltage ratings and more sophisticated options have to be considered.…”

Section: A Two-level With Medium Voltage Devices (2lmv)mentioning

confidence: 99%

Medium Voltage Power Switch in Silicon Carbide—A Comparative Study

et al. 2022

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This paper discusses various solutions of energy conversion in medium voltage using power switches in Silicon Carbide (SiC) technology. In particular, a comparative study is focused on four different variants of an inverter phase leg operating at 1.5 kV DC, which has not been presented in the literature yet. The first one is based on a standard two-level half-bridge built from a 3.3 kV SiC MOSFET power module rated at 450 A. Then, the two-level solution with series-connected devices inside 1.2 kV/450 A power modules is taken into account. Finally, a flying-capacitor phase leg also based on the same 1.2 kV devices is investigated in two different modes: a standard three-level operation and quasi-two-level mode with a significantly reduced capacitor. The presented study is founded on in-depth experiments: all four phase legs were designed, built, and tested in the laboratory. All versions were connected in a half-bridge configuration with an inductive load. Tests were conducted under identical conditions to test the overall performance and switching behavior for various gate resistances. In addition, different aspects are analyzed and compared in this paper, including parasitics, cooling performance, gate drivers and layout considerations, providing selection guidelines for power switches with SiC power devices in medium voltage power electronics applications.INDEX TERMS medium voltage, power converters, power electronics, power MOSFETs, silicon carbide.

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“…5. The sub-bands play a significant role in accumulating the electrons for fast transfers across the channel of the CSDG MOSFET [38].…”

Section: A Energy Density Analysismentioning

confidence: 99%

Parametric Analysis of CSDG MOSFET With La₂O₃ Gate Oxide: Based on Electrical Field Estimation

Gowthaman¹,

Srivastava

2021

IEEE Access

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Cylindrical Surrounding Double-Gate (CSDG) MOSFETs have been designed for a suitable CMOS replacement to diminish the power and area tradeoff. With these MOSFETs below 70 nm node for Semiconductor Industry Association (SIA) roadmap, the CMOS technology has excellent immunity to the Short Channel Effects (SCE) and better scalability. To reduce the SCE, the device was analyzed by improving the gate oxide thickness between the gate terminal and channel material and replacing the conventional Silicon dioxide layer with numerous high-ƙ dielectric materials. The gate oxide thickness is scalable so that it should have the same thickness as that of the Equivalent Oxide Thickness (EOT). This kind of novel structure shows improvement in the ON-state current and OFF-state current. The usage of the cylindrical surrounding double-gate and the high-ƙ dielectric in the oxide layer makes the MOSFET with improved stability and controllability. In this paper, the high-ƙ material is chosen in a way that it has been applied in the CSDG environment and the electrical field, electron densities have been analyzed. The semiconductor can exhibit various energy bands at the Fermi level, commonly referred to as valley. These kinds of valley semiconductors, which have several valleys are called multi-valley semiconductors. The current value in valley-1 is 2.41 mA/μm; it also drops to 62.14 % than valley-4, which has 6.38 mA/μm. However, valley-2 and valley-3 have intermediate values. The energy in the sub-band for the operating region of the source has been observed to be 19.12 % to the drain side which has the value of 0.041 eV at the terminal end. This shows the modeled CSDG MOSFET works well with the operating electric field created by the cylindrical capacitors constituted by the two different gate materials surrounding the substrate.

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An Investigation of Gate Voltage Oscillation and its Suppression for SiC MOSFET

Cited by 22 publications

References 22 publications

Investigation of Limitations in Passive Voltage Clamping-Based Solid-State DC Circuit Breakers

Investigation of Limitations in Passive Voltage Clamping-Based Solid-State DC Circuit Breakers

Medium Voltage Power Switch in Silicon Carbide—A Comparative Study

Parametric Analysis of CSDG MOSFET With La₂O₃ Gate Oxide: Based on Electrical Field Estimation

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An Investigation of Gate Voltage Oscillation and its Suppression for SiC MOSFET

Cited by 22 publications

References 22 publications

Investigation of Limitations in Passive Voltage Clamping-Based Solid-State DC Circuit Breakers

Investigation of Limitations in Passive Voltage Clamping-Based Solid-State DC Circuit Breakers

Medium Voltage Power Switch in Silicon Carbide—A Comparative Study

Parametric Analysis of CSDG MOSFET With La2O3 Gate Oxide: Based on Electrical Field Estimation

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Parametric Analysis of CSDG MOSFET With La₂O₃ Gate Oxide: Based on Electrical Field Estimation