2012
DOI: 10.1063/1.4727939
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An investigation of optimal interfacial film condition for Cu-Mn alloy based source/drain electrodes in hydrogenated amorphous silicon thin film transistors

Abstract: To aid in developing next generation Cu-Mn alloy based source/drain interconnects for thin film transistor liquid crystal displays (TFT-LCDs), we have investigated the optimal structure of a pre-formed oxide layer on phosphorus doped hydrogenated amorphous silicon (n+a-Si:H) that does not degrade TFT electrical properties. We use transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) to examine composition depth profiles of and structural information for the Cu-Mn alloy/n+a-Si:H in… Show more

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Cited by 5 publications
(3 citation statements)
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“…This is believed to be due to the oxidation of the Cu-Mn alloy film during annealing. Iijima et al reported that Mn does not tend to precipitate or segregate within the Cu film but can easily diffuse out to the surface and interface under oxidative conditions [6,12]. In contrast, Mn at the interface can be selectively oxidized by reacting with oxygen under proper conditions.…”
Section: Resultsmentioning
confidence: 99%
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“…This is believed to be due to the oxidation of the Cu-Mn alloy film during annealing. Iijima et al reported that Mn does not tend to precipitate or segregate within the Cu film but can easily diffuse out to the surface and interface under oxidative conditions [6,12]. In contrast, Mn at the interface can be selectively oxidized by reacting with oxygen under proper conditions.…”
Section: Resultsmentioning
confidence: 99%
“…This result indicates that the copper atoms are concentrated in the middle of the film while the manganese atoms are distributed on the surface and bottom. Haruhiko Asanuma et al [12] reported that Mn migrates toward the interface and reacts with a surface oxide layer until, finally, a Mn complex oxide layer is formed during subsequent annealing [19,20]. Figure 3 displays a cross-section TEM micrograph, EDX and SAD analysis of Cu-Mn alloy films with 40 at.% Dy addition that was annealed at 300 • C. There is an oxidation layer with a thickness of 3 nm on the surface as shown in Figure 3a.…”
Section: Resultsmentioning
confidence: 99%
“…In view of this matter, copper alloying is a very promising copper metallization strategy without introducing a heterogeneous adhesion-barrier layer that leads to variety of etching problems in the subsequent photolithography process [ 4 , 5 ]. Conventional binary Cu alloys, such as Cu-Ca [ 6 ], Cu-Mn [ 7 , 8 ], and Cu-Ti [ 9 ], have been verified to act as electrodes in TFTs preliminarily. However, the resistivity is uncompetitive due to the relatively high content of doped metals.…”
Section: Introductionmentioning
confidence: 99%