An Investigation of Si-SiO2 Interface Charges in Thermally Oxidized (100), (110), (111), (511) Silicon

Vitkavage, S.C.; Irene, E. A.; Massoud, Hisham Z.

doi:10.21236/ada231244

Cited by 2 publications

(2 citation statements)

References 20 publications

(36 reference statements)

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“…With recent requirements for MOSFET gate oxide of the order of 10 nm, it is necessary to control the initial stage of Si oxidation which strongly depends on both the -silicon surface orientation (1-4) and the surface preparation (5)(6)(7)(8)(9). Of particular importance are: the density of silicon atoms on different crystallographic planes (3,4); interface trapped charge where charges may be trapped in surface electronic states (10,11); refractive index…”

Section: Introductionmentioning

confidence: 99%

A Spectroscopic Differential Reflectometry Study of (100), (110), (111), (311), and (511) Silicon Surfaces

Chongsawangvirod

Irene

1991

J. Electrochem. Soc.

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Spectroscopic Differential Reflectometry, SDR, has been applied to study differences in silicon surfaces with different crystallographic orientations and with very thin films. The SDR technique measures the normalized difference in reflectance of two adjacent samples in the spectral range of 250-800 nm at near normal incidence. This study demonstrates the surface sensitivity of the SDR technique to the Si crystal orientations, and to the presence of thin oxide films on the Si substrate. The observed orientation dependent spectral features are interpreted in terms of the current understanding of the silicon uiientation depeadeiA oxidation kinetics.

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Section: Introductionmentioning

confidence: 99%

A Spectroscopic Differential Reflectometry Study of (100), (110), (111), (311), and (511) Silicon Surfaces

Chongsawangvirod

Irene

1991

J. Electrochem. Soc.

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“…Thickness gap, similar to the observation by Angermann et al [55] who observed a skewing toward the conduction band when p-type Si substrates are utilized. As compared to other thermally grown silicon oxides [56][57][58][59] which exhibited significantly lower D it values ($1-2 orders), their film thickness was however also significantly higher at $50-240 nm, making it inappropriate for tunnel layer applications. On the other hand, the wet-SiO x and ozone-SiO x tunnel oxides reported in Refs.…”

Section: Tunnel Oxidementioning

confidence: 88%

Double-Sided Passivated Contacts for Solar Cell Applications: An Industrially Viable Approach Toward 24% Efficient Large Area Silicon Solar Cells

Ling¹,

Zhang²,

Wang³

et al. 2019

Silicon Materials

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Tunnel layer passivated contacts have been successfully demonstrated for next-generation silicon solar cell concepts, achieving improved device performance stemming from the significantly reduced contact recombination of the solar cell contacts. However, these carrier-selective passivated contacts are currently deployed only at the rear side of the silicon solar cell, while the front side adopts a conventional diffused junction and contacting scheme. In this work, we report on the novelty and feasibility of deploying tunnel layer passivated contacts on both sides of a silicon wafer-based solar cell, featuring a textured front surface and a planar rear surface. In particular, we demonstrate that silicon solar cells incorporating our in-house developed electron-selective thermal-SiO x /poly-Si(n +) and hole-selective thermal-SiO x /poly-Si(p +) passivated contacts have a solar cell efficiency potential approaching 24%. Deploying contact passivation only at the rear side of the solar cell, we have reached a solar cell efficiency of 21.7%, using conventional screen printing for metallization. We present a systematic approach of evaluating our in-house developed electron-selective and hole-selective passivated contacts on both textured and planar lifetime test structures, as well as dark I-V test structures, to extract the recombination current density j 0 and the contact resistance R c of the passivated contact, which is used for process optimization as well as for subsequent efficiency potential prediction. The two key challenges aiming at a double-sided integration of passivated contacts are (1) parasitic absorption within the front-side highly doped poly-Si capping layer, requiring the processing of ultrathin (≤10-nm) contact passivation layers. This has been quantified by numerical simulation (using SunSolve™) and also solved experimentally, i.e., processing ultrathin 3-/10-nm hole/electron extracting SiO x /poly-Si(p + /n +) passivated contact layers, reaching an implied open-circuit voltage of 690/703 mV on a planar/textured silicon surface, which will even further enhance after SiN x capping. (2) Ensuring process compatibility with conventional screen printing: Screen printing on electron extracting poly-Si(n +) seems feasible; however, screen printing on holeextracting poly-Si(p +) is still a challenge. Solar cell precursors have been processed, showing excellent pre-metallization results (implied-V OC $ 713 mV). According to 1 our efficiency potential prediction (using the measured j 0 and R c values of our developed contact passivation layers), bifacial double-sided passivated contact solar cells (efficiency potential of $23.2%, using our layers) can clearly outperform rearside-only passivated contact solar cells (efficiency potential of $22.5%).

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An Investigation of Si-SiO2 Interface Charges in Thermally Oxidized (100), (110), (111), (511) Silicon

Abstract: Ba. NAME OF FUNDING/SPONSORING 8 b. OFFICE SYMBOL 9. PROCUREMENT INSTRUMENT IDENTIFICATION NUMBER ORGANIZATION (If applicable)

Cited by 2 publications

References 20 publications

A Spectroscopic Differential Reflectometry Study of (100), (110), (111), (311), and (511) Silicon Surfaces

A Spectroscopic Differential Reflectometry Study of (100), (110), (111), (311), and (511) Silicon Surfaces

Double-Sided Passivated Contacts for Solar Cell Applications: An Industrially Viable Approach Toward 24% Efficient Large Area Silicon Solar Cells

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