Articles you may be interested inThe effect of rapid thermal N2O nitridation on the oxide/Si(100) interface structure Appl.Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersTrends in the electronic properties of the Si-Si0 2 interface with various processing have been frequently reported. The present study focuses on silicon substrate orientation dependent trends in fixed oxide charge, Qf' and interface trap charge, Dit> for four silicon orientations:( 100), (110), (111), and (511 ), for oxidation temperatures in the 750-1100 °C range, with and without hydrogen-containing post-metal anneals, and for processing within and without a cleanroom. It is found that the presence of mobile ionic charge in non-cleanroom processing and the lack of post-metal annealing can either obscure or enhance some trends. Both Qf and Dit increase for decreasing oxidation temperature for all silicon orientations, The orientational ordering of the charges varies with oxidation temperature and is dominated by the silicon atom areal density at the lowest temperatures with (110) Si having the highest charge, but a change to the ( 111) orientation is observed at higher oxidation temperatures. This orientational charge ordering paralJels the orientational oxidation rate ordering but not the intrinsic stress. A model is proposed that considers the orientation ally dominated oxidation rate, viscous relaxation, and strain accommodation across the interface as crucial processes.

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