A manufacturable embedded fluorinated SiO/sub 2/ for advanced 0.25 μm CMOS VLSI multilevel interconnect applications

Pai, C. S.; Velaga, Ankineedu; Lindenberger, W.S.; Lai, Wei-Chih; Cheung, Kin P.; Baumann, F.H.; Chang, Chen; Liu, C.T.; Liu, R.; Diodato, P.W.; Colonell, Jennifer; Vaidya, H.; Vitkavage, S.C.; Clemens, J.T.; Tsubokura, F.

doi:10.1109/iitc.1998.704745

Cited by 3 publications

(2 citation statements)

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“…[12][13][14] However, only a few articles in the literature examined the diffusion behavior of Cu into FSG film. [15][16][17][18][19] Furthermore, quite different results were reported in those articles. It was even reported that Cu does not diffuse into FSG film under bias-temperature stress ͑BTS͒ at 200°C and 3.5 MV/cm for 30 min.…”

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Surface-Processing-Enhanced Copper Diffusion into Fluorosilicate Glass

Tsui

Fang

Lee³

2001

J. Electrochem. Soc.

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This study investigated copper diffusion into processed fluorosilicate glass ͑FSG͒. It is observed that the surface process enhances the flatband voltage shift of the Cu/FSG/Si capacitor structure under bias-temperature stress. Secondary-ion mass spectroscopy analysis confirmed that the flatband voltage shift was due to Cu diffusion into the FSG film. Thermal desorption spectrometer analysis indicated that the surface damage layer took up more moisture. A surface-damage-layer-enhanced Cu ionization model was then proposed to explain the observation. The investigation concludes that the diffusion of Cu into FSG is strongly dependent on the surface condition of the FSG film. The proposed model also provides explanation for the inconsistent results reported in previous literature.With the progress of microelectronics technology, the feature size of the integrated circuit has scaled down rapidly. The smaller cross section of metal lines and the narrower space between the metal lines results in significant signal delay along multilevel interconnections. 1 It is well accepted that copper ͑Cu͒ and low dielectric constant ͑low-k͒ materials are inevitable at the sub-0.13 micrometer technology nodes. 2,3 Because Cu is a serious contamination source in silicon and most of the dielectrics, Cu lines must be sealed with suitable diffusion barriers, and Cu contamination during processing must be monitored and controlled. 4-7 Therefore, understanding of the mechanism of Cu diffusion into the dielectric is twofold. First, if the dielectric shows a good barrier property, diffusion barrier layers can be eliminated. The process can be simplified and the performance can be further improved. Second, if Cu can diffuse into the dielectric, the diffusion behavior must be understood such that contamination during processing can be monitored and controlled.Many low-k materials have been proposed in the past ten years to reduce interconnect capacitance. Among them, fluorosilicate glass ͑FSG͒ is the most desirable because of its good thermal and chemical stability and its similarity to silicon dioxide (SiO 2 ). Hence, it can be readily integrated into the fabrication process. [8][9][10][11] Recently, Cu and FSG had been successfully integrated together. 12-14 However, only a few articles in the literature examined the diffusion behavior of Cu into FSG film. [15][16][17][18][19] Furthermore, quite different results were reported in those articles. It was even reported that Cu does not diffuse into FSG film under bias-temperature stress ͑BTS͒ at 200°C and 3.5 MV/cm for 30 min. 18 The major drawback of the previous studies is that they all used as-deposited FSG film to examine the behavior of Cu diffusion in FSG film. This is not appropriate for the following reasons. In the damascene process, FSG film would experience several processes, such as dielectric etching, ion-sputtering clean before metal deposition, and chemical mechanical polish ͑CMP͒. 20 Figure 1 describes the major steps of the Cu dual-damascene process. After the first Cu-interco...

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confidence: 88%

Surface-Processing-Enhanced Copper Diffusion into Fluorosilicate Glass

Tsui

Fang

Lee³

2001

J. Electrochem. Soc.

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“…Renewable energy has become the most promising candidate to address this issue on a large scale [5]. Solar energy is an attractive renewable energy source; one advantage is that it can be used in remote areas, where the grid extensions are costly [6][7][8][9]. Due to the fluctuating nature of solar irradiance, solar energy must be used with alternate power devices or storage systems [10,11].…”

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confidence: 99%

Enhanced Intelligent Energy Management System for a Renewable Energy-Based AC Microgrid

et al. 2020

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This paper proposes an enhanced energy management system (EEMS) for a residential AC microgrid. The renewable energy-based AC microgrid with hybrid energy storage is broken down into three distinct parts: a photovoltaic (PV) array as a green energy source, a battery (BT) and a supercapacitor (SC) as a hybrid energy storage system (HESS), and apartments and electric vehicles, given that the system is for residential areas. The developed EEMS ensures the optimal use of the PV arrays’ production, aiming to decrease electricity bills while reducing fast power changes in the battery, which increases the reliability of the system, since the battery undergoes fewer charging/discharging cycles. The proposed EEMS is a hybrid control strategy, which is composed of two stages: a state machine (SM) control to ensure the optimal operation of the battery, and an operating mode (OM) for the best operation of the SC. The obtained results show that the EEMS successfully involves SC during fast load and PV generation changes by decreasing the number of BT charging/discharging cycles, which significantly increases the system’s life span. Moreover, power loss is decreased during passing clouds phases by decreasing the power error between the extracted power by the sources and the required equivalent; the improvement in efficiency reaches 9.5%.

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