2015
DOI: 10.1016/j.jcrysgro.2014.12.011
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An investigation of sol–gel spin coating growth of wurtzite GaN thin film on 6H–SiC substrate

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Cited by 16 publications
(7 citation statements)
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“…The uniform, thin coating layer on the struts of the scaffolds could be attributed to the spin coating process used. During the process, the centrifugal force could help the precursor solution evenly distribute inside the scaffolds and prevent the precursor from clogging [ 36 , 37 ].…”
Section: Discussionmentioning
confidence: 99%
“…The uniform, thin coating layer on the struts of the scaffolds could be attributed to the spin coating process used. During the process, the centrifugal force could help the precursor solution evenly distribute inside the scaffolds and prevent the precursor from clogging [ 36 , 37 ].…”
Section: Discussionmentioning
confidence: 99%
“…Several studies have attempted to synthesize GaN nanostructures using various growth techniques, including metal-organic chemical vapor deposition [20], reactive molecular beam epitaxy [21], thermal ammonization [22,23], physical vapor deposition [24,25], chemical vapor deposition (CVD) [26], sol-gel chemistry [27], electrochemical deposition [28], thermal vapor deposition [29], and pulsed laser deposition (PLD) [30]. These methods have a common drawback in high temperatures and costly chemicals, leading to a relatively low production yield.…”
Section: Introductionmentioning
confidence: 99%
“…Several studies have attempted to synthesize GaN nanostructures using various growth techniques, including metal-organic chemical vapor deposition [20], reactive molecular beam epitaxy [21], thermal ammonization [22,23], physical vapor deposition [24,25], chemical vapor deposition (CVD) [26], sol-gel chemistry [27], electrochemical deposition [28], thermal vapor deposition [29], and pulsed laser deposition (PLD) [30]. These methods have a common drawback in high temperatures and costly chemicals, leading to a relatively low production yield.…”
Section: Introductionmentioning
confidence: 99%