An iterative and consistent method for the complex refraction index calculation of absorbent thin films

The effect of i‐layer thickness, tin oxide texture, and back reflector (BR) on optical enhancement has been systematically studied in a series of 20 a‐Si p–i–n solar cells. The internal quantum efficiency has been analyzed by a simple model based on the work of Schade and Smith. The enhancement of optical absorption is characterized by m, a wavelength‐dependent fitting parameter representing the increase in optical pathlength relative to the i‐layer thickness d. Solar cells with an Al BR have negligible optical enhancement, with m < 1.5, consistent with large parasitic absorption at the Al/Si interface as reported by others. Solar cells on highly textured SnO2 with ZnO/Al or ZnO/Ag BR have peak values of m ∼ 3–4, with ZnO/Ag having slightly larger values than ZnO/Al. It was found that m has a strong dependence on the product αd, and that maximum values of m increase with reflectivity of the BR. It is shown that a major source of parasitic absorption loss at long wavelengths is light trapping in the textured SnO2 front contact. Copyright © 2002 John Wiley & Sons, Ltd.

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Complex Refractive Index of a-Si:F Thin Films

García-Castañeda

Mariño-Camargo

1992

Springer Proceedings in Physics

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An iterative and consistent method for the complex refraction index calculation of absorbent thin films

Cited by 6 publications

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Analysis of quantum efficiency and optical enhancement in amorphous Sip–i–nsolar cells

Complex Refractive Index of a-Si:F Thin Films

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