An LCD addressed by a-Si:H TFTs with peripheral poly-Si TFT circuits

Tanaka, Takeshi; Asuma, H.; Ogawa, Kazutoshi; Shinagawa, Y.; Ono, Kyosuke; Konishi, N.

doi:10.1109/iedm.1993.347327

Cited by 27 publications

(16 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The use of low thermal budget ( 600 C), and less expensive substrate materials such as plastic and glass makes TFTs a low-cost choice for a wide range of applications such as active matrix liquid crystal displays (AMLCDs) [1], and memory devices [2]. With the possibility of monolithic integration of CMOS drivers and other peripheral circuit elements, poly-Si TFTs have paved the way for system on-panel device integration [4].…”

Section: Introductionmentioning

confidence: 99%

“…L OW temperature polycrystalline silicon (Poly-Si) thin-film transistors (TFTs) on insulating substrates such as glass and plastics, even at sub-100 nm channel lengths, are aggressively investigated in the literature [1]- [9]. The use of low thermal budget ( 600 C), and less expensive substrate materials such as plastic and glass makes TFTs a low-cost choice for a wide range of applications such as active matrix liquid crystal displays (AMLCDs) [1], and memory devices [2].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

Nadda

Kumar

2014

J. Display Technol.

View full text Add to dashboard Cite

A lateral polysilicon Bipolar Charge Plasma Transistor (poly-Si BCPT) on undoped recrystallized polycrystalline silicon which is compatible with the thin-film field effect transistor (TFT) fabrication is reported in this paper. Using calibrated two-dimensional device simulation, the electrical performance of the poly-Si BCPT is evaluated in detail by considering the position of the single grain boundary. Our simulation results demonstrate that the poly-Si BCPT has the potential to realize low-cost thin-film polycrystalline silicon bipolar transistors with large current gain and cut-off frequency making it suitable for a number of applications including the driver circuits of the displays.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

Nadda

Kumar

2014

J. Display Technol.

View full text Add to dashboard Cite

show abstract

“…The low-cost of LTPS TFT is attributed to low thermal budget (<500°C), simple fabrication process, and less expensive substrate materials such as plastic and glass than silicon. However, state-of-art LTPS TFT technology has limited applications -mainly for liquid crystal displays (LCDs) [1]. This is primarily due to its low current drivability and performance variability due to the presence of grain boundaries (GBs) in the poly-Si channel.…”

Section: Introductionmentioning

confidence: 99%

Poly-Si Thin Film Transistors: Opportunities for low-cost RF applications

Kim

Loke

Park

et al. 2012

2012 IEEE International Conference on IC Design &Amp; Technology

View full text Add to dashboard Cite

The demand for low-power and low-cost RF applications such as wireless sensor nodes and radio frequency identification (RFID) have driven the development of new technologies in lieu of bulk CMOS. Low Temperature Polycrystalline Silicon Thin Film Transistors (LTPS TFTs) on glass substrates is one of the promising candidates for its low manufacturing cost. However, due to inherent grain boundaries (GBs) in the channel, poly-Si TFTs suffer from lower carrier mobility compared to bulk CMOS transistors. This has been the critical limiting factor for its use in low-voltage and high-speed operations. In this paper, our device modeling present the potential of optimized LTPS TFTs for high frequency operations --cut off frequency f T ~40 GHz of nFETs. We show that high resistivity channel due to the presence of GBs leads to high linearity and independence from channel length. In addition, glass substrate also presents a major advantage by providing negligible substrate-loss, leading to high quality-factor inductors. With the proposed LTPS TFTs and inductors, we designed an inductive coupling wireless link having 2.7 mW of power consumption. This wireless link demonstrates an upper limit of 408 Mbps data rate with inductive coupling distance of 5 cm between two coupling inductors. The designed wireless link presents new opportunities for low-cost RF applications.

show abstract

“…Microstructural characteristics (roughness and grain size) were measured and their dependence on germane content to the gas flow during deposition elucidated using a range of analysis techniques, including fractal methods. By tracking the evolution of cross-over points in the fractal spectrum, an estimate for the grain size range can be obtained, which tallies extremely well with actual topographical measurements.Thin film transistors (TFTs) are employed in a number of advanced technological environments such as high-density static random access memory (SRAM) for load pull-up devices [1, 2] and also as large-area active matrix liquid crystal displays (AMLCDs) for both switching elements and peripheral driver circuitry [3,4]. Although polycrystalline Si (polySi) is widely used as the active layer in TFT applications, the performance of the device is degraded if the processing temperature is decreased [5].…”

mentioning

confidence: 99%

“…Thin film transistors (TFTs) are employed in a number of advanced technological environments such as high-density static random access memory (SRAM) for load pull-up devices [1, 2] and also as large-area active matrix liquid crystal displays (AMLCDs) for both switching elements and peripheral driver circuitry [3,4]. Although polycrystalline Si (polySi) is widely used as the active layer in TFT applications, the performance of the device is degraded if the processing temperature is decreased [5].…”

mentioning

confidence: 99%

The effect of germane variation on microstructure in polycrystalline Si/Si 1-x Ge x thin films grown by rapid thermal chemical vapour deposition: fractal characterisation using scanning probe microscopy

Campbell¹,

Walmsley²,

Chong³

et al. 1998

Applied Physics A: Materials Science & Processing

View full text Add to dashboard Cite

Scanning probe microscopy (SPM) techniques have been employed to image and characterise polycrystalline thin films of both pure silicon and Si/Si 1−x Ge x . The layers were grown on oxidised silicon substrates using a rapid thermal chemical vapour deposition (RTCVD) reactor. Microstructural characteristics (roughness and grain size) were measured and their dependence on germane content to the gas flow during deposition elucidated using a range of analysis techniques, including fractal methods. By tracking the evolution of cross-over points in the fractal spectrum, an estimate for the grain size range can be obtained, which tallies extremely well with actual topographical measurements.Thin film transistors (TFTs) are employed in a number of advanced technological environments such as high-density static random access memory (SRAM) for load pull-up devices [1, 2] and also as large-area active matrix liquid crystal displays (AMLCDs) for both switching elements and peripheral driver circuitry [3,4]. Although polycrystalline Si (polySi) is widely used as the active layer in TFT applications, the performance of the device is degraded if the processing temperature is decreased [5]. This means that fabrication of high-performance poly-Si TFTs typically requires high temperatures (T ≥ 600 • C) and also long anneal times. The use and maintenance of elevated temperatures is undesirable, not only from an economic point of view, but also because the integrity of underlying dopant profiles can be degraded by higher-temperature processing.

show abstract

An LCD addressed by a-Si:H TFTs with peripheral poly-Si TFT circuits

Cited by 27 publications

References 1 publication

Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

Poly-Si Thin Film Transistors: Opportunities for low-cost RF applications

The effect of germane variation on microstructure in polycrystalline Si/Si 1-x Ge x thin films grown by rapid thermal chemical vapour deposition: fractal characterisation using scanning probe microscopy

Contact Info

Product

Resources

About