An MOS transistor model for analog circuit design

Abstract

This paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model. Index Terms-Circuit modeling, integrated circuit design, MOS analog integrated circuits, MOS devices.

Automated design of operational transconductance amplifiers using reversed geometric programming

“…A typical choice of variables is W , L and a bias variable. IDS is preferred over VGS − VT as the bias variable, since, for a long channel MOSFET, all small-signal parameters, from weak inversion to strong inversion, can be expressed as a function of IDS [3], Expressing the same small-signal parameters analytically as a function of VGS − VT is not possible, since there is no analytical solution for the surface potential as a function of the terminal voltages [15, p. 134].…”

Integrated Power Management Circuit for Piezoelectronic Generator in Wireless Monitoring System of Orthopedic Implants

“…In [13], Christian C. Enz and Eric A. Vittoz presented an EKV model for MOS transistors and this model can represent the MOS characteristics in different working regions using one equation, wherever the possible regions MOS transistors may work in. In [14], researchers proposed another MOSFET model, which has the common property that tries to use a unified model for MOS transistors in all regions, and the corresponding design methods. According to all of these papers, there are several equations available to design low power circuits.…”

Improvements in Biasing and Compensation of CMOS Opamps

“…Strong Inversion (M 2B ) and Weak Inversion (M X ) Consider the case where M X is in weak inversion and M 2B is in strong inversion. In weak inversion, gm X is given by (8), where t is the thermal voltage, and n is the slope factor (n 1.2) [3].…”