2007
DOI: 10.1364/oe.15.004745
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An optical fiber-taper probe for wafer-scale microphotonic device characterization

Abstract: Abstract:A small depression is created in a straight optical fiber taper to form a local probe suitable for studying closely spaced, planar microphotonic devices. The tension of the "dimpled" taper controls the probe-sample interaction length and the level of noise present during coupling measurements. Practical demonstrations with high-Q silicon microcavities include testing a dense array of undercut microdisks (maximum Q = 3.3×10 6 ) and a planar microring (Q = 4.8×10 6 ).

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Cited by 110 publications
(91 citation statements)
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“…16 A broadband cavity transmission spectrum is shown in Fig. 3͑a͒, with the first and second order optical cavity modes separated by roughly by 10 nm, in agreement with simulations.…”
supporting
confidence: 79%
“…16 A broadband cavity transmission spectrum is shown in Fig. 3͑a͒, with the first and second order optical cavity modes separated by roughly by 10 nm, in agreement with simulations.…”
supporting
confidence: 79%
“…The electrical circuit is then defined in a ZEP lift-off process using an aligned electron beam lithography step, followed by deposition of chromium (5 nm) and gold (50 nm) through optical transmission measurements using a tunable external cavity semiconductor diode laser (Newfocus Velocity series) whose frequency tuning is calibrated with an unbalanced fiber Mach-Zender interferometer. Optical coupling to a given device is achieved via a tapered and dimpled optical fiber probe, which when placed in near-field of the photonic crystal cavity allows for evanescent coupling of light between the fiber and cavity [25]. An optical transmission scan, shown in Fig.…”
Section: Design and Fabricationmentioning
confidence: 99%
“…In the past two decades, there has been growing interest in photonic devices based on Si-compatible materials (Kimerling et al, 2004;Jalali & Fathpour, 2006) in the field both of the optical telecommunications and of the optical interconnects. In this contest, tremendous progresses in the technological processes based on the use silicon-on insulator (SOI) substrates have allowed to obtain reliable and effectiveness full complementary metal-oxide semiconductor (CMOS) compatible optical components such as, low loss waveguides, high-Q resonators, high speed modulators, couplers, and optically pumped lasers (Rowe et al, 2007 ;Vivien et al, 2006 ;Xu et al, 2007 ;Michael et al, 2007;Liu et al, 2007 ;Liu et al, 2006). All these devices have been developed to operate in the wavelength range from C optical band (1528-1561 nm) to L optical band (1561-1620 nm).…”
Section: Introductionmentioning
confidence: 99%