An optoelectronic CMOS memory circuit for parallel detection and storage of optical data

Sayles, Andre H.; Uyemura, John P.

doi:10.1109/4.90064

Cited by 25 publications

(4 citation statements)

References 7 publications

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“…Position detector of four quadrant is made up of four p-n junction diodes on the same substrate, preparing de output to connect to amplification circuits on CMOS technology 10, 11 The anode or active area of each element is individually contacted so that a light spot illuminating a single quadrant may be electrically characterized as being only in that quadrant.…”

Section: Quadrant Detectormentioning

confidence: 99%

<title>Silicon quadrant detector in CMOS technology</title>

Vera-Marquina

Torres‐Jácome

2004

SPIE Proceedings

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An optoelectronic device that detect visible light is designed in silicon technology, peaking in 650 nm wavelength. The quadrant detector (QD) derive photocurrents by projecting a light spot on four photodiodes placed close to each other on a silicon common substrate. The photodetector is square shaped with 2.25 mm2 per active area by each quadrant and the size of the device is 9mm2. This work describes a technology to develop position sensitive detectors of four quadrant optimizing geometry to increase sensitivity. We propose to integrate sensor into complementary metal-oxidesemiconductor (CMOS) technology in order to improve photodetector out signal, reducing noise generated when photodetector is so far from data acquisition system.

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Section: Quadrant Detectormentioning

confidence: 99%

<title>Silicon quadrant detector in CMOS technology</title>

Vera-Marquina

Torres‐Jácome

2004

SPIE Proceedings

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“…In this paper, pixel denotes the elementary sensory unit used to detect pointwise light signals. These sensory units are realized in CMOS technology using any compatible junction device to generate a current whose value is an increasing function of the light intensity [3], [13], [14]. The acquisition of two-dimensional scenes requires pixels arranged onto regular grids, as shown in Fig.…”

Section: Smart-pixel Chipsmentioning

confidence: 99%

“…The simplest photosensitive devices for CMOS n-well technologies are reverse-biased photodiodes, formed either directly between n + -diffusion and substrate [3] or between well and substrate [13]. Current level for both devices is an increasing function of the junction area.…”

Section: A Photosensorsmentioning

confidence: 99%

Smart-pixel cellular neural networks in analog current-mode CMOS technology

Espejo

Rodríguez-Vázquez

Domínguez-Castro

et al. 1994

IEEE J. Solid-State Circuits

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This paper presents a systematic approach to design CMOS chips with concurrent picture acquisition and processing capabilities. These chips consist of regular arrangements of elementary units, called smart pixels. Light detection is made with vertical CMOS-BJTs connected in a Darlington structure. Pixel smartness is achieved by exploiting the Cellular Neural Network paradigm [1], [2], incorporating at each pixel location an analog computing cell which interacts with those of nearby pixels. We propose a current-mode implementation technique and give measurements from two 16 × 16 prototypes in a single-poly double-metal CMOS n-well 1.6µm technology. In addition to the sensory and processing circuitry, both chips incorporate lightadaptation circuitry for automatic contrast adjustment. They obtain smart-pixel densities up to 89 units/mm 2 , with a power consumption down to 105µW/unit and image processing times below 2µs.

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“…The absorption process is very dependent on the wavelength of the incident light, and on the depletion region depth [7], [8]. The photodetector current taken from the emitter is @+1) times the base current.…”

Section: A Operationmentioning

confidence: 99%