An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor

Fujihara, Yasuyuki; Murata, Maasa; Nakayama, Shunichi; Kuroda, Rihito; Sugawa, Shigetoshi

doi:10.1109/ted.2020.3038621

Cited by 26 publications

(13 citation statements)

References 21 publications

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“…For SNR, Murata and Fujihara et al presented a pixel with a high SNR of 70 dB ( Murata et al, 2020 ; Fujihara et al, 2021 ). The pixel size was 16 × 16 μm, and ultra-large capacitances were achieved with in-pixel capacitors.…”

Section: Discussionmentioning

confidence: 99%

Self-Reset Image Sensor With a Signal-to-Noise Ratio Over 70 dB and Its Application to Brain Surface Imaging

et al. 2021

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In this study, we propose a complementary-metal-oxide-semiconductor (CMOS) image sensor with a self-resetting system demonstrating a high signal-to-noise ratio (SNR) to detect small intrinsic signals such as a hemodynamic reaction or neural activity in a mouse brain. The photodiode structure was modified from N-well/P-sub to P+/N-well/P-sub to increase the photodiode capacitance to reduce the number of self-resets required to decrease the unstable stage. Moreover, our new relay board was used for the first time. As a result, an effective SNR of over 70 dB was achieved within the same pixel size and fill factor. The unstable state was drastically reduced. Thus, we will be able to detect neural activity. With its compact size, this device has significant potential to become an intrinsic signal detector in freely moving animals. We also demonstrated in vivo imaging with image processing by removing additional noise from the self-reset operation.

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Section: Discussionmentioning

confidence: 99%

Self-Reset Image Sensor With a Signal-to-Noise Ratio Over 70 dB and Its Application to Brain Surface Imaging

et al. 2021

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“…In [79], DD-CMS readout allows 5x noise reduction, and the noise level of 15 e-with a conversion gain of 8.3 µV/e is obtained. Another possibility is a readout using switchable conversion gain such as lateral overflow integration capacitors(LOFICs) [80,81]. Although the implementation of additional capacitors is required, the stacked CIS technology, especially pixel-parallel connection [12,76], may resolve the issues.…”

Section: Storage Designmentioning

confidence: 99%

Lock-in Pixel Based Time-of-Flight Range Imagers: An Overview

Yasutomi

Kawahito

2022

IEICE Trans. Electron.

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Time-of-flight (TOF) range imaging is a promising technology for various applications such as touchless control, augmented reality interface, and automotive. The TOF range imagers are classified into two methods: direct TOF with single photo avalanche diodes and indirect TOF with lock-in pixels. The indirect TOF range imagers have advantages in terms of a high spatial resolution and high depth precision because their pixels are simple and can handle many photons at one time. This paper reviews and discusses principal lock-in pixels reported both in the past and present, including circuit-based and charge-modulator-based lock-in pixels. In addition, key technologies that include enhancing sensitivity and background suppression techniques are also discussed.

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“…The high signal noise ratio (SNR) output of the CMOS sensor often necessitates a long integration time, in order to reduce the effect of shot noise. However, this method comes at the expense of the increase in dark current noise [17]. The dark current noise from the CMOS sensor can be seen as a broadband noise, which can be modelled by a time-dependent Poisson distribution, and under certain conditions can have an appreciable impact on spectral signal [18,19].…”

Section: Introductionmentioning

confidence: 99%

A Design of Real-Time Data Acquisition and Processing System for Nanosecond Ultraviolet-Visible Absorption Spectrum Detection

et al. 2022

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Ultraviolet-visible absorption spectroscopy is widely used to monitor water quality, and rapid optical signal detection is a key technology in the process of spectrum measurement. In this paper, an ultrafast spectrophotometer system that can achieve spectrum data acquisition in a single flash of the xenon lamp (within 200 ns) is introduced, and a real-time denoising method for the spectrum is implemented on a field programmable gate array (FPGA) to work cooperatively with the nanosecond spectrum acquisition system, in order to guarantee the quality of the spectrum signals without losing running speed. The hardware of the data acquisition and processing system are constructed on a Xilinx Spartan 6 FPGA chip and its peripheral circuit, including an analog to digital converter and a complementary metal-oxide-semiconductor transistor (CMOS) sensor’s diver circuit. An oversampling method that is suitable for the CMOS sensor’s output is proposed, which works on the CMOS sensor’s dark current noise and readout noise. Another moving-average filter method is designed adaptively, which works on the low-frequency component to filter out the residual spectrum noise of the spectrum signal. The implementation of the filter on the FPGA has been optimized by using a pipelined structure and dual high-speed random-access memory (RAM). As a result, the CMOS linear image sensor successfully captured the spectrum of xenon flash light at the readout clock frequency of 500 kHz and the processing manipulation to the full UV-Vis spectrum data was accomplished at a sub-microsecond speed performance. After the digital filter and oversampling technology were implemented, the coefficient of variation of the measurements reduced from 9.57% to 1.74%, while the signal noise ratio (SNR) of the absorption spectrum increased nine times, compared to the raw data of the CMOS sensor’s output. The tests towards different analyte samples were conducted, and the system shows good performance on distinguishing different concentrations of different analyte solutions on both ultra-violet and visible spectrum bands. The present work showcases the potential of the CMOS sensor’s technique for the fast detection of contaminated water containing nitrate and organic compounds.

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An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor

Cited by 26 publications

References 21 publications

Self-Reset Image Sensor With a Signal-to-Noise Ratio Over 70 dB and Its Application to Brain Surface Imaging

Self-Reset Image Sensor With a Signal-to-Noise Ratio Over 70 dB and Its Application to Brain Surface Imaging

Lock-in Pixel Based Time-of-Flight Range Imagers: An Overview

A Design of Real-Time Data Acquisition and Processing System for Nanosecond Ultraviolet-Visible Absorption Spectrum Detection

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