An overview of instanteneous radiation effect on MOSFETs for harsh environment applications

Yahya, Erman Azwan; Kannan, Ramani; Baharudin, Z.; Krishnamurthy, Saranya

doi:10.1109/roma.2017.8231837

Cited by 3 publications

(5 citation statements)

References 33 publications

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“…Gamma-ray is a photon radiation in electromagnetic energy that emitted by the nucleus of some radionuclides following radioactive decay. They are the most energetic photon in the electromagnetic spectrum and their emission can occur less than a second [5,6].…”

Section: Photon Radiationmentioning

confidence: 99%

“…Power electronics application in the harsh environment has exposed the electronic device to a catastrophic failure mechanism because of radiation pollution. Most of the device will suffer from SEE phenomena either SEGR or SEB [6]. SEGR is the phenomena that will damage the gate oxide structure by damaging the function of the gate to control the current from source to drain.…”

Section: Radiation Effect On Power Mosfetmentioning

confidence: 99%

“…Besides, SEGR gives a great impact to the device parameter especially the threshold voltage (Vth) and drain-source voltage (VDS). The change in the drain-source resistance shifts the value of Vth and the increase in the VDS [6][7][8].…”

Section: Radiation Effect On Power Mosfetmentioning

confidence: 99%

“…In addition, SEB gives more impact to p-channel MOSFET than n-channel MOSFET. In p-channel MOSFET, the magnitude of avalanche generated current is lower due to the less impact ionization rate of hole compares to electron [6][7][8].…”

Section: Radiation Effect On Power Mosfetmentioning

confidence: 99%

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Study the Effects of Photon Radiation on Power MOSFET for Harsh Environment Application

et al. 2018

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The rapid growth of the advanced technologies in power electronics system gives a challenge to the electronic device to sustain with the modern technologies nowadays. The challenges are also including the place where the system was installed for example the application in the harsh environment. Harsh environment application requires an electronic device deals with radiation pollution. Hence, the electronic device will suffer from this phenomenon and make the whole system to malfunction and break down. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is one type of electronic device that is the most broadly for high voltage and high switching speed application. The aim of this paper is to studies the photon radiation effect toward the Power MOSFET performance. The study focus on the changing of the electrical characteristics of the device after radiated with photon radiation. Process simulation and Device simulation tools in Sentaurus Synopsys Software used for the research to validate all the theory.

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Section: Photon Radiationmentioning

confidence: 99%

Section: Radiation Effect On Power Mosfetmentioning

confidence: 99%

Section: Radiation Effect On Power Mosfetmentioning

confidence: 99%

Section: Radiation Effect On Power Mosfetmentioning

confidence: 99%

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Study the Effects of Photon Radiation on Power MOSFET for Harsh Environment Application

et al. 2018

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“…This makes this device practicable to be installed in both high blocking voltage and high current within a compact piece of silicon [3]. Hence, due to this advantages, most of the vertical MOSFET was designed for switching applications and they are used in both on-state and off-states [4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Simulation study of single event effects sensitivity on commercial power MOSFET with single heavy ion radiation

Yahya¹,

Kannan²,

Lee³

2019

Bulletin EEI

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High-frequency semiconductor devices are key components for advanced power electronic system that require fast switching speed. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most famous electronic device that are used in much power electronic system. However, the application such as space borne, military and communication system needs Power MOSFET to withstand in radiation environments. This is very challenging for the engineer to develop a device that continuously operated without changing its electrical behavior due to radiation. Therefore, the main objective of this study is to investigate the Single Event Effect (SEE) sensitivity by using Heavy Ion Radiation on the commercial Power MOSFET. A simulation study using Sentaurus Synopsys TCAD software for process simulation and device simulation was done. The simulation results reveal that single heavy ion radiation has affected the device structure and fluctuate the I-V characteristic of commercial Power MOSFET.

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A Study of Electrical Field Stress Issues in Commercial Power MOSFET for Harsh Environment Applications

Yahya

Kannan

2020

Practical Examples of Energy Optimization Models

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An overview of instanteneous radiation effect on MOSFETs for harsh environment applications

Cited by 3 publications

References 33 publications

Study the Effects of Photon Radiation on Power MOSFET for Harsh Environment Application

Study the Effects of Photon Radiation on Power MOSFET for Harsh Environment Application

Simulation study of single event effects sensitivity on commercial power MOSFET with single heavy ion radiation

A Study of Electrical Field Stress Issues in Commercial Power MOSFET for Harsh Environment Applications

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