An overview of self-switching diode rectifiers using green materials

Kasjoo, Shahrir R.; Zailan, Zarimawaty; Zakaria, Nor Farhani; Isa, M. Mohamad; Arshad, M. K. Md; Taking, S.

doi:10.1063/1.5002451

Cited by 8 publications

(3 citation statements)

References 27 publications

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“…The voltage sensitivity of the device is represented by the value of γ/4 (refer Section 4) [40], and the Noise Equivalent Power (NEP) is defined as the noise power density over the detection sensitivity [23] where it is represented by the minimum detectable power per square root bandwidth (W/Hz 1/2 ) [44]. Researches using various materials were conducted not only by employing semiconductor materials, but also by using other green materials [45] such as P3HT [46] and MOS 2 [47], but there are no records on the mobility and f c . However, SSD fabricated on graphene possess a large number of carrier density, but having a low mobility value, up to 1400 cm 2 /Vs with largest recorded detection at 67 GHz, as shown in Table 2.…”

Section: Ssd Using Various Materialsmentioning

confidence: 99%

Self-switching diodes as RF rectifiers: evaluation methods and current progress

Zakaria¹,

Kasjoo²,

Isa³

et al. 2019

Bulletin EEI

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In the advancement of the Internet of Things (IoT) applications, widespread uses and applications of devices require higher frequency connectivity to be explored and exploited. Furthermore, the size, weight, power and cost demands for the IoT ecosystems also creates a new paradigm for the hardware where improved power efficiency and efficient wireless transmission needed to be investigated and made feasible. As such, functional microwave detectors to detect and rectify the signals transmitted in higher frequency regions are crucial. This paper reviewed the practicability of self switching diodes as Radio Frequency (RF) rectifiers. The existing methods used in the evaluation of the rectification performance and cut-off frequency are reviewed, and current achievements are then concluded. The works reviewed in this paper highlights the functionality of SSD as a RF rectifier with design simplicity, which may offer cheaper alternatives in current high frequency rectifying devices for application in low-power devices.

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Section: Ssd Using Various Materialsmentioning

confidence: 99%

Self-switching diodes as RF rectifiers: evaluation methods and current progress

Zakaria¹,

Kasjoo²,

Isa³

et al. 2019

Bulletin EEI

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“…In 2003, Song et al introduced a new nanometer scale unipolar rectifying diode called selfswitching device (SSD) which shows I-V characteristics similar to conventional diodes [8]. The performance of SSD has been observed in various materials [9,10] and had showed a detection capability of 1.5 THz [11], with higher detection of 2.5 THz at 150 K [12] on GaAs/AlGaAs substrate.…”

Section: Introductionmentioning

confidence: 99%

Improved Rectification Performance and Terahertz Detection in Hybrid Structure of Self-Switching Device (SSD) and Planar Barrier Diode (PBD) Using Two-Dimensional Device Simulation

Zakaria

Kasjoo

Isa

et al. 2020

SSP

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Recently, simulations of In0.48Ga0.52As-based Planar Barrier Diode (PBD) and Self-Switching Device (SSD) as millimeter-wave rectifiers were reported. Both PBD and SSD have a planar structure, but with different insulating shapes and working principles. In this work, a hybrid structure of the reported PBD and SSD in a parallel configuration is proposed, to exploit the advantages of each device. The advantages of high rectifying properties in the SSD and fast switching rate of the PBD are combined in this hybrid structure in order to obtain an improved rectification performance at zero-bias in the near terahertz frequency region. Analysis of the curvature co-efficient, γ, which is defined as the ratio of the second order to the first order derivative of the device’s I-V function was performed to evaluate the rectification performance. AC transient analyses were then executed in various frequencies to imitate the high-frequency signal inputs. By using this hybrid structure, the highest value of γ achieved has been improved to ~19 V-1 at 70 mV, and ~6 V-1 at zero-bias (compared to the previous results on PBDs). The estimated cut-off frequency obtained was ~360 GHz (0.36 THz), operating at zero-bias.

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“…Extensive research has been conducted on the SSD using various semiconductor materials and geometries. [19][20][21][22] With prudent consideration of III-V high-mobility materials, high-frequency detection can be achieved. The highest reported frequency detection of the SSD was 1.5 THz (at T = 300 K) using 2000 GaAs=AlGaAs-based SSDs connected in parallel.…”

Section: Introductionmentioning

confidence: 99%

InGaAs-based planar barrier diode as microwave rectifier

Zakaria¹,

Kasjoo²,

Zailan³

et al. 2018

Jpn. J. Appl. Phys.

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In this report, we proposed and simulated a new planar nonlinear rectifying device fabricated using InGaAs substrate and referred to as a planar barrier diode (PBD). Using an asymmetrical inverse-arrowhead-shaped structure between the electrodes, a nonuniform depletion region is developed, which creates a triangular energy barrier in the conducting channel. This barrier is voltage dependent and can be controlled by the applied voltage across the PBD, thus resulting in nonlinear diode-like current-voltage characteristics; thus it can be used as a rectifying device. The PBD's working principle is explained using thermionic emission theory. Furthermore, by varying the PBD's geometric design, the asymmetry of the current-voltage characteristics can be optimized to realize superior rectification performance. By employing the optimized structural parameters, the obtained cut-off frequency of the device was approximately 270 GHz with a curvature coefficient peak of 14 V %1 at a low DC bias voltage of 50 mV.

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An overview of self-switching diode rectifiers using green materials

Cited by 8 publications

References 27 publications

Self-switching diodes as RF rectifiers: evaluation methods and current progress

Self-switching diodes as RF rectifiers: evaluation methods and current progress

Improved Rectification Performance and Terahertz Detection in Hybrid Structure of Self-Switching Device (SSD) and Planar Barrier Diode (PBD) Using Two-Dimensional Device Simulation

InGaAs-based planar barrier diode as microwave rectifier

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