An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors

Abstract

The dependence of device reliability against a variety of stress conditions on the annealing atmosphere was studied using a single metal-oxide thin-film transistor with thermally induced source/drain regions. A cyclical switch between an oxidizing and a non-oxidizing atmosphere induced a regular change in the stress-induced shift of the turn-on voltage, with the magnitude of the shift being consistently smaller after annealing in an oxidizing atmosphere. The observed behavior is discussed in terms of the dependence of the population of oxygen vacancies on the annealing atmosphere, and it is recommended the last of the sequence of thermal processes applied to a metal-oxide thin-film transistor be executed in an oxidizing atmosphere.

P‐15: The Use of Fluorination to Enhance the Performance and the Reliability of Elevated‐Metal Metal‐Oxide Thin‐Film Transistors

“…The reliability of an EMMO TFT against bias and thermal stress is also known to depend on the presence and the amount of defects in the channel region [11]. Positive gate-bias temperature stress (PBTS) was carried out at 85 °C with Vg set at Von + 20 V. When the non-fluorinated EMMO TFTs were subjected to PBTS, the families of transfer curves shifted in the negative Vg direction (Fig.…”

Thin Film Logic Circuits with Amorphous SiInZnO Channel Layer Annealed at Different Atmospheres for Next‐Generation Integrated Circuits

“…A previous study has reported that changing the atmosphere during the annealing treatment process affects the thin film . According to Li et al, the oxygen vacancy ( V O ) in the thin film can be suppressed by the O 2 annealing process, which can improve stability. This is because the O 2 inside the furnace diffuses into the channel layer and fills the V O .…”

24.3: Short‐Channel Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor Enabled by Thermal Dehydrogenation and Oxidizing Defect‐Suppression

“…Longer thermal annealing is apparently more effective for driving out hydrogen. The population could be increased by subjecting the TFT to an additional nitrogen (N 2 ) anneal at 350 °C for 10 minutes [13]. The resulting transfer curves are shown in Fig.…”