An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier

Zhou, Shaohua; Jian, Wang

doi:10.1109/jeds.2021.3121132

Cited by 5 publications

(4 citation statements)

References 19 publications

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“…As a result, the investigation on temperature behavior for MMIC PA is relatively rare. Notably, the lowest temperature, RT, and highest temperature are only investigated in several reports [10,11]. Moreover, the specific temperature range such as 20 • C-80 • C [12], 0 • C-100 • C [13], 10 • C-90 • C [14], or 27 • C-125 • C [15] may be unable to grasp the performance changes comprehensively.…”

Section: Introductionmentioning

confidence: 99%

Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature

Jia

Lin

Wu³

et al. 2022

Electronics

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In order to comprehensively grasp the performance changes for the monolithic microwave integrated circuit (MMIC), this paper proposes that the complete temperature reliability tests for a 2.4–4.4 GHz gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) high gain power amplifier (PA) should be investigated. The performance for this MMIC PA at different temperatures has been presented effectively. The results show that the direct current (DC) characteristics, small-signal gain (S21), and radio frequency (RF) output characteristics for this MMIC PA decrease and the output third-order intersection point (OIP3) increases with the rising temperature. The main factor influencing the performance is analyzed in detail. For further applications of this MMIC PA, several measures can be utilized to remedy the performance degradation. This paper can provide significant engineer guidance for the reliability design of RF microwave circuits.

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Section: Introductionmentioning

confidence: 99%

Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature

Jia

Lin

Wu³

et al. 2022

Electronics

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“…The literature reported that thermal shock experiments will increase the threshold voltage [20,21]. Therefore, when the number of thermal shocks is changed, the expression for the drain current can be written as:…”

Section: Thermal Shock Experimentsmentioning

confidence: 99%

“…The cause of output power degradation is the mismatch of the thermal expansion coefficient of the PCB material. The mismatch in the coefficient of thermal expansion of the material will cause an increase in the resistance of the solder joint, which makes the thermal loss of the resistance increase [21,23]. This means that, for a given PA input power, more energy is converted into heat in the PA. Then, the P out will decrease for a given input power as the Joule heat in the solder joint increases.…”

Section: Output Powermentioning

confidence: 99%

Investigation of the Specification Degradation Mechanism of CMOS Power Amplifier under Thermal Shock Test

2022

Self Cite

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To investigate the critical specifications of a power amplifier (PA) under rapidly changing temperature conditions, we fabricated and tested a 0.3–1.1 GHz complementary metal–oxide–semiconductor (CMOS) PA under thermal shock tests. The results show that high- and low-temperature shocks can accelerate the degradation of critical specifications of PAs and that the critical specifications of PAs degrade with the increasing number of shocks. The main reason for the degradation of critical specifications of PAs with increasing thermal shock tests is the mismatch of thermal expansion coefficients of printed circuit boards (PCB) with FR-4 as a substrate. The results of this paper can provide a reference for the development of temperature-robust PAs design guidelines for the implementation of temperature-robust PAs using low-cost silicon technology.

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“…To some extent, its performance directly determines the reliable operation of communication system. However, the communication system often works in the severe environments, such as the low temperature, high temperature, large temperature difference, high humidity, and so on 6,7 . The harsh conditions will definitely have a significant impact on the performance of PA.…”

Section: Introductionmentioning

confidence: 99%

Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA

Lin,

Jia,

et al. 2023

Int J Numerical Modelling

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As the key component of transceiver, power amplifier (PA) plays an extremely important role in wireless communication system. In order to accurately characterize the performance variation of PA at any temperature, the temperature behavior of a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) high gain monolithic microwave integrated circuit (MMIC) PA is modeled in this paper. In this modeling, the resilient back propagation neural network (BPNN) is utilized to do the temperature behavior modeling for this PA. The investigation shows that the minimum mean square error (MSE) of the prediction results is 4.9607 × 10−4, which implies that it is feasible to use this modeling method to characterize the temperature behavior of PA. This modeling not only theoretically overcomes the problem of slow convergence speed of BPNN, but also solves the limitation of experimental devices and time setting. It will provide a more convenient guidance for test engineers.

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An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier

Cited by 5 publications

References 19 publications

Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature

Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature

Investigation of the Specification Degradation Mechanism of CMOS Power Amplifier under Thermal Shock Test

Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA

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