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In order to comprehensively grasp the performance changes for the monolithic microwave integrated circuit (MMIC), this paper proposes that the complete temperature reliability tests for a 2.4–4.4 GHz gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) high gain power amplifier (PA) should be investigated. The performance for this MMIC PA at different temperatures has been presented effectively. The results show that the direct current (DC) characteristics, small-signal gain (S21), and radio frequency (RF) output characteristics for this MMIC PA decrease and the output third-order intersection point (OIP3) increases with the rising temperature. The main factor influencing the performance is analyzed in detail. For further applications of this MMIC PA, several measures can be utilized to remedy the performance degradation. This paper can provide significant engineer guidance for the reliability design of RF microwave circuits.

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