Analysis and Design of an Ultrabroadband Stacked Power Amplifier in CMOS Technology

Wu, Haifeng; Cheng, Qian‐Fu; Li, Xuguang; Fu, Haipeng

doi:10.1109/tcsii.2015.2504926

Cited by 42 publications

(19 citation statements)

References 20 publications

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“…Therefore wideband power benefits characteristic could be achieved. In 2016, H. Wu described [11] Analysis & Design of an Ultra broad band Stacked Power Amplifier in CMOS Technology. The research work has proposed the calculation with the design of a two level stacked powers is also determined here.…”

Section: IImentioning

confidence: 99%

Designing CMOS based Class E Power Amplifier

Anand¹

2019

IJRASET

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Here in this paper the power amplifier and CMOS has been explained. The present researches in sector of power amplifier and CMOS are also discussed here. The proposed work focus on the design and implementation of Class E power amplifier that should be CMOS technology based. The simulation of work is made in MATLAB. The design of circuit has been built of Simulink tool available in MATLAB. The proposed work would play significant role in designing application particular integrated circuits. Multi mode class e radio power amplifier has been using 30 nm CMOS technology with programming. This research has proposed Advanced CMOS RF Power Amplifier Architecture. Research has presented PAE% according to frequency. Comparison chart of Tradition researches where frequency was 5.2 to 13 ghz , 4 to 17 ghz, 6.5 to 13 ghz, 0.1 to 65 ghz,0.2 to 2.5 ghz in proposed research frequency 2.4ghz has been represented. Output power & power gain has been simulated in this section. Multi mode class e radio power amplifier has been using 30 nm CMOS technology with programming. Such system would be suitable for low power fifth generation wireless networks.

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Section: IImentioning

confidence: 99%

Designing CMOS based Class E Power Amplifier

Anand¹

2019

IJRASET

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“…Fritsche et al used a differential stacked circuit with true inductors in SiGe BiCMOS and obtained a bandwidth of 1.7 GHz to 2.5 GHz . Wu et al implemented a two‐stage, three‐stacked PA in CMOS technology with a bandwidth ranging from 0.1 GHz to 6.5 GHz . They also designed a 2 GHz to 19 GHz GaN distributed PA circuit with six cells, in which each cell contains three stacked transistors .…”

Section: Introductionmentioning

confidence: 99%

“…14 Wu et al implemented a two-stage, three-stacked PA in CMOS technology with a bandwidth ranging from 0.1 GHz to 6.5 GHz. 15 They also designed a 2 GHz to 19 GHz GaN distributed PA circuit with six cells, in which each cell contains three stacked transistors. 16 Recently, we have reported a 30 MHz to 3 GHz Gallium arsenide (GaAs) PA fabricated in 0.15 μm pseudomorphic high-electron-mobility transistor (PHEMT).…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of a stacked power amplifier with 196% fractional bandwidth using equivalent circuit model

Wang

et al. 2020

Int J RF Microw Comput Aided Eng

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Stacked structure is a good solution to overcome the low output voltage swing provided by a single device. When several devices are stacked, the bandwidth and output power are multiple times higher. This article analyzes the small‐signal voltage gain of the stacked structure, deriving the gain expression of the high‐frequency model and simplified model. Based on the specific device parameter, the different small‐signal voltage gains between the two models are compared and the designed stacked structure is proved to obtain a flat gain at low frequencies below about 3 GHz. To our best knowledge, this is the first article to analyze the gain flatness of stacked structure with two equivalent circuit models. To verify the stacked theory, a pseudomorphic high‐electron‐mobility transistor（PHEMT） power amplifier (PA) is implemented using 0.25 μm Gallium arsenide (GaAs) technology. The PA achieves an ultra‐high bandwidth of 30 MHz to 3 GHz and a linear gain of 21 dB ± 1.5 dB. At a 16‐V drain bias voltage, a saturated output power of higher than 2 W and a peak power‐added efficiency (PAE) of 44.1% are attained.

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“…Stacked configuration is another important method for broadband PAs [9,10,11]. With several same transistors stacked in the PA, the bandwidth and output power are enhanced.…”

Section: Introductionmentioning

confidence: 99%

A 30 MHz–3 GHz watt-level stacked-FET linear power amplifier

Asif

Wang

et al. 2019

IEICE Electron. Express

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In this letter, we present a 30 MHz-3 GHz ultra-broadband GaAs stacked power amplifier (PA) fabricated in 0.15 µm pHEMT process for many applications. The implemented PA obtains 18.9 dB ² 0.9 dB flat gain by using novel input matching networks, and better than 10 dB input and output return loss. The large-signal measurements show that the output power is 30.5 dBm ² 1.2 dB at 12 dBm input power, with a peak PAE of 30% at 400 MHz. For multi-standard system usage, the broadband PA also shows good linearity when tested with two tones and long-term evolution (LTE) signal.

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Analysis and Design of an Ultrabroadband Stacked Power Amplifier in CMOS Technology

Cited by 42 publications

References 20 publications

Designing CMOS based Class E Power Amplifier

Designing CMOS based Class E Power Amplifier

Analysis and design of a stacked power amplifier with 196% fractional bandwidth using equivalent circuit model

A 30 MHz–3 GHz watt-level stacked-FET linear power amplifier

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