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as complete loss of orthogonality [4]. The DLI-based STM-ICI suppression provides the more tolerance to r s =T S with less requirements of the CP. With the increase in N SC the design of DLI-based passive device for ICI suppression will be same,ABSTRACT: This article presents a novel and simple dual-band (DB) matching network (MN) consisting of a traditional single-band MN with a DB stub-loaded line-based network in cascade. Design equations are presented, and design procedures are elaborated. The fabricated DB power amplifier achieves peak power added efficiency of 72 and 71.5% with output power of 41 and 40.1 dBm at 1.8 and 2.4 GHz, respectively.

Recent decades have seen significant progresses in the field of power amplifiers (PAs). In order to present the evolution of the field, this paper shows the development trends of the PA research based on the statistical analysis from 1970 to 2017. The brief history of radio frequency (RF)/microwave PAs and a comprehensive review on the evolution of RF/microwave PAs are presented. The state-of-the-art PAs thus far based on the statistical analysis in terms of the figure of merit (FoM) of RF/microwave PAs have been discussed in this paper. A quantitative relationship of trade-off of PA performance metrics is proposed, and the potential room for improvement of the performance of the PAs is also revealed.

state-of-the-art VCOs. Although the fabricated VCO chip shows better phase noise than the references [4][5][6][7][8], the main achievement of this work is to obtain high-RF output power with high efficiency and high value of FOM PE , at least compared with the other VCO chips in the references [4][5][6][7][8] around the operating frequency of 1 GHz. CONCLUSIONA high-power and high-efficiency LC cross-coupled CMOS VCO is developed to be integrated into ADS-B transmitter. By operating in the borderline of voltage-limited and currentlimited mode and using custom designed diode-connected NMOS transistors as variable capacitors, the VCO delivers single-ended peak output power of 1.4 dBm and differential peak output power of 4.4 dBm at 1.097 GHz and maintains almost constant output power in the entire frequency tuning range of 120 MHz. Additionally, using diode-connected tail transistor, the VCO achieves core efficiency of 32.5% and the whole chip efficiency of 5.7%. The state-of-the-art performance comparison shows this CMOS VCO delivers highest reported output power with highest efficiency and highest FOM around 1 GHz operating frequency to the best of author's knowledge with good phase noise performance and desirable tuning range, thus shows the promising applications toward realizing highpower single-chip CMOS-based ADS-B transmitter.ABSTRACT: This article presents a straightforward parasiticcompensation design method for class-F and class-F 21 (inverse F) power amplifiers (PAs) based on a simple L-shaped transmission-line section. Design equations are presented and design procedures are elaborated. The fabricated PAs, operating at 2.14 GHz, deliver maximum power-added efficiency of 80.2% for the class-F mode and 79.1% for the class-F 21 mode, respectively.ABSTRACT: This article presents the image reconstruction results of measurement data from a preliminary test using the first-developed precision microwave tomography (MT) system operating at 3-6 GHz for medical diagnosis. A simple phantom is used in the MT system to verify the data validation. The measurement dataset has very different patterns owing to the significant contrast of dielectric properties according to the existence of a phantom in the sensing area of the illumination tank at microwave frequencies. Thus, it is possible to obtain the image reconstruction from this measurement data. The detailed results are presented and discussed.