Two-Stage High-Efficiency Concurrent Dual-Band Harmonic-Tuned Power Amplifier

Cheng, Qian‐Fu; Fu, Haipeng; Zhu, Shou‐Kui; Ma, Jan

doi:10.1109/tmtt.2016.2597825

Cited by 38 publications

(15 citation statements)

References 23 publications

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“…According to Equations (1) and (2), the impedances of fundamental and second harmonic can be obtained as follows:…”

Section: Conventional Class-j Modementioning

confidence: 99%

“…With the unintermitted evolution of wireless communication technology, large number of communication standards have been put forward and implemented. Meanwhile, the proposed communication standards results in enhancing requirements for radio frequency transmitters operating in multiband modes for bandwidth and low‐loss . In order to promote the development of communication system, many multiband and broadband structures have been presented.…”

Section: Introductionmentioning

confidence: 99%

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Design of multioctave high‐efficiency power amplifier based on extended continuous Class‐B/J modes

Xuan

Yang

Liu

2019

Int J RF Microw Comput Aided Eng

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The bandwidth covered by contemporary communication technologies has reached over an octave. But most existing power amplifier (PA) configurations cannot meet this requirement while at the same time maintaining a high efficiency. Therefore, a novel structure for bandwidth enhancement at a high efficiency level is proposed together with the systematic design methodology in this article. The difficulty lies in the overlap of the fundamental and harmonic frequencies. On this issue, the extended continuous Class‐B/J mode can extend the impedance of the second harmonic to a resistive‐reactive and relax design requirements for overlapping design space of fundamental and second harmonic frequencies. Specifically, the presented innovative circuit structure uses the multiple frequencies matching method to manipulate four fundamental and the corresponding second harmonics frequency points simultaneously, which can further effectively expand the bandwidth on the basis of the extended continuous Class‐B/J PA. To verify the validity of the proposed theory, a gallium nitride multioctave PA is designed, implemented, and measured. Measured results show a fractional bandwidth of 148.4% from 0.4 to 2.7 GHz, with drain efficiency of 63%‐78%, saturated output power greater than 39 dBm, and large signal gain larger than 9 dB. For the single carrier WCDMA signal with a channel bandwidth of 3.84 MHz and a peak to average power ratio of 6 dB, the adjacent channel power ratio of −47.5 to −35 dBc and −42.8 to −31.5 dBc at an average output power of 33 and 36 dBm separately are achieved over the whole frequency band.

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“…According to Equations (1) and (2), the impedances of fundamental and second harmonic can be obtained as follows:…”

Section: Conventional Class-j Modementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design of multioctave high‐efficiency power amplifier based on extended continuous Class‐B/J modes

Xuan

Yang

Liu

2019

Int J RF Microw Comput Aided Eng

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“…2.2 Class-E PA considering the parasitics of transistor Practically, as shown in Fig.3, the multiple impedance solutions are derived at class-E reference plane, while the output matching networks are conducted on the package plane. By using the S-parameters (S P ) extracted from the approximated equivalent network of the parasitic model at device output [22], the optimal impedances ZE = [ZE(f) ZE(2f)] at class-E reference plane can be transformed to the package plane Zpkg = [Zpkg(f) Zpkg(2f)], which are calculated by [22].…”

Section: Class-e Pa With Extended Fmaxmentioning

confidence: 99%

“…The optimum shunt capacitance and the excess capacitance at 1.9 GHz are: C1 = 0.34 pF and CX1 = 0.88 pF, while C2 = 0.3 pF and CX2 = 0.92 pF at 2.5 GHz. However, the intrinsic parasitics are usually nonlinear (voltage dependent), which might result in an accuracy degradation of this model in the high power case [22]. Fortunately, a high-accuracy nonlinear model of this transistor is available from the manufacturer.…”

Section: Db Class-e Pa Implementation and Performancementioning

confidence: 99%

High-efficiency concurrent dual-band class-E power amplifier with extended maximum operating frequency

Zeng

Huang

2019

IEICE Electron. Express

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This paper presents a method for designing high-efficiency concurrent dual-band (DB) class-E power amplifier (PA) that operate above the theoretical maximum frequency (fmax). The excess output capacitances at the two desired frequencies can be compensated using the proposed output matching network without separate design of harmonic compensation network, thus the fundamental and harmonic impedances for DB optimum class-E operation are achieved above the fmax, considering the parasitics of the packaged transistor. For demonstration, the fabricated DB class-E PA using GaN HEMT features the maximum power-added efficiency (PAE) of 74.1% and 72.6% at 1.9 and 2.5 GHz, while the output power is 40.3 and 40.7 dBm, respectively.

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“…The key of high efficiency dual-band PA designs is to achieve the control of the impedances at the harmonics, especially the second and third harmonics. The outputmatching network (OMN) based on the conventional design method is composed of two essential independent stages: harmonic control circuit and dual-band fundamental matching network [2][3][4] . This design method has distinct design thought but suffers from the complex circuit structure.…”

Section: Introductionmentioning

confidence: 99%

A novel analytic design method of dual‐band harmonic‐tuned power amplifiers

Zhang

Chen

Gao

et al. 2018

Micro & Optical Tech Letters

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In this paper, an analytic methodology for designing output‐matching network (OMN) is presented. The proposed OMN integrates harmonic control circuit and reduces the complexities of design and circuit structure. Besides, the second and third harmonics control are provided for two operated frequencies. In order to verify the method, a 1.8/2.65 GHz dual‐band high‐efficiency PA adopting a GaN HEMT is presented. Experimental results show the drain efficiencies of 76.2% and 71.6%, output power of 43 and 42.7 dBm at 1.8 and 2.65 GHz, respectively. In addition, the drain efficiency more than 65% can be maintained from 1.55‐2.0 GHz and 2.65‐2.8 GHz.

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Two-Stage High-Efficiency Concurrent Dual-Band Harmonic-Tuned Power Amplifier

Cited by 38 publications

References 23 publications

Design of multioctave high‐efficiency power amplifier based on extended continuous Class‐B/J modes

Design of multioctave high‐efficiency power amplifier based on extended continuous Class‐B/J modes

High-efficiency concurrent dual-band class-E power amplifier with extended maximum operating frequency

A novel analytic design method of dual‐band harmonic‐tuned power amplifiers

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