An RLC matching network and application in 1-20 GHz monolithic amplifier

Ikalainen, P.K.

doi:10.1109/mwsym.1989.38918

Cited by 20 publications

(13 citation statements)

References 4 publications

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“…A big part-of the circuits were also measured and results showed that the prosses are rather good and the simulated performance figures differ very little from the measured results. The results are rather well documented[40,41,42,43,44,45,46,47,48,49,50,51,52,53,54]. The main activity was in VTT and in Nokia.…”

mentioning

confidence: 72%

Research and New Developments in Microwave Communications in Finland

Santomaa

1992

22nd European Microwave Conference, 1992

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Finland has long traditions in microwave technology and techniques. The first development work was a 8 channel radiolink for 7 GHz in 1948. After that many radars, radiolinks, radiometers, radio astronomy receivers, satellite receivers and antennas have been developed.The main subjects covered are wave propagation-studies, radiolinks and satellite and land mobile communications terminals including antennas. Also a short overview of developments on MMIC technology is given.

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confidence: 72%

Research and New Developments in Microwave Communications in Finland

Santomaa

1992

22nd European Microwave Conference, 1992

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“…If the internal gate‐source resistance ( R i ) is assumed to be zero, the all‐pass network can be simplified into a bridged‐T form second order all‐pass network, as shown in Figure 1A. Figure 1B shows that the three‐ports structure is redrawn for IMN . It is an amplifier circuit, which ensures wide bandwidth through the IMN circuit design.…”

Section: Power Amplifier Design and Fabricationmentioning

confidence: 99%

A broadband RLC matched GaN power amplifier using interposer‐MMIC technology

Yoon

Yook

Kim

et al. 2020

Micro & Optical Tech Letters

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In this article, we report a compact and low‐profile GaN‐based broadband power amplifier using silicon interposer‐MMIC (iMMIC) technology. The iMMIC technology enables a GaN HEMT to be embedded in the silicon substrate, and passive circuit elements such as metal‐insulator‐metal (MIM) capacitors, spiral inductors, and thin film resistors to be implemented on the high‐resistivity silicon (HRS) substrate using standard integrated passive device (IPD) process, so that the final power amplifier is almost indistinguishable from a single GaN MMIC power amplifier. The RLC matched all‐pass network and LC ladder type low‐pass network are employed as the input matching network and output matching network, respectively. The proposed power amplifier has a Psat of 39.1 to 39.2 dBm with a power‐added efficiency (PAE) of 40% to 50.5% in the frequency range of 2.1 to 3.5 GHz under continuous wave (CW) input signal. The proposed iMMIC power amplifier occupies only 9.9 mm2.

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“…In our work, we have used a compact RLC type bridged-T all-pass input matching network that can provide multi-decade bandwidth with very good input return loss [13]. This type of match has been used for a 1W MMIC amplifier over 2-6GHz with 30-37% efficiency, and 3W flip-chip hybrid amplifier over 3-9GHz bandwidth with 14-24% efficiency in GaAs MESFET and GaN HEMT technologies respectively [14,15].…”

Section: Broadband Pa Topologymentioning

confidence: 99%

“…A series capacitance (C div ) was used to trade off gain for bandwidth of 2.2 GHz. Using the design equations for the allpass bridged-T network [13], the input matching network was designed. Z g was chosen to be 50Ω for a wideband match down to low frequencies.…”

Section: Circuit Designmentioning

confidence: 99%

RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

Krishnamurthy¹,

Wang²,

Landberg³

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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We have demonstrated a RLC matched GaN HEMT power amplifier with 12dB gain, 0.05-2.0 GHz bandwidth, 8W CW output power and 36.7-65.4% drain efficiency over the band. The amplifier is packaged in a ceramic SO8 package and contains a GaN on SiC device operating at 28V drain voltage, alongside GaAs integrated passive matching circuitry. A second circuit designed for 48V operation and 15W CW power over the same band, obtains over 20W under pulsed condition with 10% duty cycle and 100μs pulse width. CW measurements are pending after assembly in an alternate high power package. These amplifiers are suitable for use in wideband digital cellular infrastructure, handheld radios, and jamming applications.

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An RLC matching network and application in 1-20 GHz monolithic amplifier

Cited by 20 publications

References 4 publications

Research and New Developments in Microwave Communications in Finland

Research and New Developments in Microwave Communications in Finland

A broadband RLC matched GaN power amplifier using interposer‐MMIC technology

RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

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