An ultra-sensitive AlGaN/AlN/GaN/AlGaN photodetector: Proposal and investigation

Khaouani, M.; Hamdoune, Abdelkader; Bencherif, H.; Kourdi, Z.; Dehimi, L.

doi:10.1016/j.ijleo.2020.164797

Cited by 31 publications

(11 citation statements)

References 33 publications

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“…III-nitride semiconductor materials possess remarkable characteristics of wide energy bandgap, high thermal conductivity, large electron mobility, robust radiation resistance, and excellent chemical stability [1][2][3]. III-nitride-based ultraviolet (UV) photodetectors (PDs) have the potential for achieving high responsivity, fast response, and low dark current 5 Authors of equal contribution.…”

Section: Introductionmentioning

confidence: 99%

Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity

Zhu,

Chu,

Tian

et al. 2024

Semicond. Sci. Technol.

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In this report, we propose a polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer. We employ an Al-composition-graded AlxGa1-xN layer for achieving p-type doping feature. We have studied the light propagation in the unintentionally doped GaN (i-GaN) absorption layer with different thicknesses, and the optimized thickness is 2 μm. As a result, the photo current of 10-2 A/cm2 and the responsivity of 2.12 A/W can be obtained at the applied bias of 5 V. In our fabricated device, during the current transport process, the photo-generated carriers are not along the device surface. Therefore, the photoconductive effect will be absent, and hence our device achieves a response speed with a rise time of 43.3 ms and a fall time of 86.4 ms.

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Section: Introductionmentioning

confidence: 99%

Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity

Zhu,

Chu,

Tian

et al. 2024

Semicond. Sci. Technol.

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“…Moreover, Gate Engineering Techniques is utilized for the implementation purpose [10]- [15]. Besides, some researchers has investigated on the addition of An Aluminum Nitride layer (Thin) increases electrical different characteristics mobility and sheet charge density [16][17][18], An AlGaN/AlN/GaN/Al-GaN Photodetector HEMT design improves transconductance, photocurrent and offers high current [19].The leakage current can be reduced by adding the back barrier into the structure of AlGaN/GaN based HEMT [20]. In present study, the main objective of the work is to focus on enhancing ALGaN/GaN HEMT's performance which is compatible for high frequency as well as high power applications.…”

Section: Introductionmentioning

confidence: 99%

Improvement of AlGaN/ GaN based HEMT with high performance rate for integrated circuit design for wide range of applications

Jadhav,

Bakar Khan

2024

JICS

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In the current research work, we focused on the design and analysis of a semiconductor device called High-Elec-tron-Mobility Transistor (HEMT) based on the AlGaN/GaN material system. An Aluminum Nitride spacer,Layer of Nucle-ation along with cap as a AlGaN and barrier of GaN with the channel of AlGaN are incorporated to enhance HEMT device performance.The electrical characteristics of the proposed HEMT are an-alyzed. The Drain Current is found to be 0.18A/mm, indicating the device's ability to handle high current levels. The Electron Concentration is observed to have a maximum value of -96.12electrons/cm3 and varying based on the position in the channel for GaN Barrier thickness is 0.15mm. In the analysis of AC such as Gain of the Maximum Unilateral Power is deter-mined to be 83.41dB, indicating the ability of the device to am-plify signals. The Y-parameters, which characterize the de-vice's behavior at various frequencies of operation, are also de-termined. The capacitance between the electrode region Gate-Source (CGSMIN) is found to be 1.70×10^-11 F/mm, and alike The Capacitance between the electrode region the Gate-Drain Ca-pacitance (CGDMIN) is determined to be 4.7×10^-12 F/mm. Fur-thermore, an Electric Field of 96.51×10^3 V/mm is observed, in-dicating the strength of the electric field across the device. For HEMT device the simulation,The TCAD Silvaco software is be-ing practiced.

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“…Compared with these materials, GaN-based optoelectronic technologies have gone from exploratory research to industrial applications, which are particularly useful in ultraviolet photodetectors and short wavelength emitters. [29][30][31][32] Especially, the spontaneous and piezoelectric polarization effects cause high-mobility two-dimensional electron gas (2DEG) channel in AlGaN/GaN high-electron-mobility-transistor (HEMT), resulting in large photogain (G) and low noise equivalent power at room temperature. However, limited by the unidirectional photoresponse, coupling of electrical and light stimulation is necessary for triggering inhibitory and excitatory postsynaptic current of these devices.…”

Section: Introductionmentioning

confidence: 99%

“…However, limited by the unidirectional photoresponse, coupling of electrical and light stimulation is necessary for triggering inhibitory and excitatory postsynaptic current of these devices. [ 29,33,34 ] For visual sensor applications, bidirectional light‐modulated synaptic behavior is highly desired for emulating the neurobiological functionality of bipolar cells in human retina. Furthermore, the data storage capacity in the HEMT‐based UV photodetectors, affected by the materials epitaxial quality and fabricated process, is still far less capable than the reported optoelectronic memories.…”

Section: Introductionmentioning

confidence: 99%

Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor

et al. 2022

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The extraordinary optoelectronic properties and continued commercialization of GaN enable it a promising component for neuromorphic visual system (NVS). However, typical GaN‐based optoelectronic devices demonstrated to data only show temporary and unidirectional photoresponse in ultraviolet region, which is an insurmountable obstacle for construction of NVS in practical applications. Herein, an ultrasensitive visual sensor with phototransistor architecture consisting of AlGaN/GaN high‐electron‐mobility‐transistor (HEMT) and two‐dimensional Ruddlesden–Popper organic–inorganic halide perovskite (2D OIHP) is reported. Utilizing the significant variation in activation energy for ion transport in 2D OIHP (from 1.3 eV under dark to 0.4 eV under illumination), the sensor can efficiently perceive and storage optical information in ultraviolet–visible region. Meanwhile, the photo‐enhanced field‐effect mechanism in the depletion‐mode HEMT enables gate‐tunable negative and positive photoresponse, where some typical optoelectronic synaptic functions including inhibitory and excitatory postsynaptic current as well as paired‐pulse facilitation are demonstrated. More importantly, a NVS based on the proposed visual sensor array is constructed for achieving neuromorphic visual preprocessing with an improved color image recognition rate of 100%.

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An ultra-sensitive AlGaN/AlN/GaN/AlGaN photodetector: Proposal and investigation

Cited by 31 publications

References 33 publications

Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity

Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity

Improvement of AlGaN/ GaN based HEMT with high performance rate for integrated circuit design for wide range of applications

Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor

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