An Ultralow Power Time-Domain Temperature Sensor With Time-Domain Delta–Sigma TDC

Song, Wonjong; Lee, Junan; Cho, Nayeon; Burm, Jinwook

doi:10.1109/tcsii.2015.2503717

Cited by 28 publications

(6 citation statements)

References 15 publications

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“…The temperature sensor described in [13] also belongs to this type, despite its output is a voltage instead of a delay and one of its sensing devices works in the triode region. The temperature-dependent delay may also be quantized by a time-domain delta-sigma analog-to-digital converter (ADC), as presented in [14]. line's thermal coefficient may become zero when VDD is around 0.75 V. The same zero temperature coefficient may apply to the current-starved delay line, e.g., when VBIASN = 0.75 V for Figure 6, and this point is called the zero temperature coefficient (ZTC), which is the basis for the temperature insensitive reference delay line described in [6,8,10].…”

Section: The Logic Saturation and Linear Mos-based Temperature Sensor...mentioning

confidence: 99%

The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review

Xie

2022

Electronics

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This review paper categorizes the state-of-the-art MOS (metal oxide semiconductor)-based temperature sensors according to their thermal sensing principles, including: type I, the logic, saturation and linear MOS-based temperature sensors; type II, the subthreshold MOS-based temperature sensors; and type III, the gate leakage-based temperature sensors. It also discusses in detail the design considerations and challenges of MOS-based temperature sensors, in terms of area, energy efficiency, supply voltage, inaccuracy, noise, as well as process and power supply variations. Based on the aforementioned discussions, the paper concludes that the future MOS-based temperature sensors will mostly likely be based on subthreshold MOS operation, with better trade-offs between area, energy efficiency and accuracy, and with reduced power supply sensitivity and level, as well as a lower-cost, fewer-point calibration method.

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Section: The Logic Saturation and Linear Mos-based Temperature Sensor...mentioning

confidence: 99%

The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review

Xie

2022

Electronics

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“…But it is difficult to realize in time mode due to difficulty in designing a time integrator. So designers switch between time mode (direct measurement) 79,80 and pseudo time mode (indirect measurement). 81,82 Figure 19 shows the ΔΣ modulator with and without TDC quantizer.…”

Section: Harmonic Ring Oscillator Tdcmentioning

confidence: 99%

Time‐to‐digital converters—A comprehensive review

Mattada

Guhilot

2021

Circuit Theory & Apps

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Summary This work presents a comprehensive literature review on different topologies of time‐to‐digital converters (TDCs). A brief history, applications, classification, characterization, and working principle of each TDC are mentioned. A survey of both Field Programmable Gate Array (FPGA) and Application‐Specific Integrated Circuit (ASIC) architectures is covered. The trade‐off with respect to applications, pros, and cons of different architectures and future scope of TDC as an alternative data converter is also explored.

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“…During the last decade, there have been numerous proposals for temperature sensors mainly oriented towards the needs of DTM systems [1,[12][13][14][15][16]. They usually have a common feature which is avoiding the use of ADCs to save area and power consumption; instead, they employ a time-to-digital converter (TDC) or a (FDC) to perform the digitization.…”

Section: Introductionmentioning

confidence: 99%

A 900 μm2 BiCMOS Temperature Sensor for Dynamic Thermal Management

Aparicio

Ituero

2020

Sensors

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The extreme miniaturization of electronic technologies has turned varying and unpredictable temperatures into a first-class concern for high performance processors which mitigate the problem employing dynamic thermal managements control systems. In order to monitor the thermal profile of the chip, these systems require a collection of on-chip temperature sensors with strict demands in terms of area and power overhead. This paper introduces a sensor topology specially tailored for these requirements. Targeting the 40 nm CMOS technology node, the proposed sensor uses both bipolar and CMOS transistors, benefiting from the stable thermal characteristics of the former and the compactness and speed of the latter. The sensor has been fully characterized through extensive post-layout simulations for a temperature range of 0 ∘ C to 100 ∘ C , achieving a maximum error of ±0.9 ∘ C / considering 3 σ yield and a resolution of 0.5 ∘ C . The area—900 μ m 2 , energy per conversion—1.06 nJ, and sampling period—2 μ s, are very competitive compared to previous works in the literature.

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An Ultralow Power Time-Domain Temperature Sensor With Time-Domain Delta–Sigma TDC

Cited by 28 publications

References 15 publications

The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review

The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review

Time‐to‐digital converters—A comprehensive review

A 900 μm2 BiCMOS Temperature Sensor for Dynamic Thermal Management

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