2014
DOI: 10.1109/tmag.2013.2283774
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An UWB Antenna Design With Adjustable Second Rejection Band Using a SIR

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Cited by 13 publications
(9 citation statements)
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“…Another pair of radiating parasitic elements has been attached to the ground plane to radiate in such a way that cancels the radiation of the original UWB antenna at the WLAN band (5.15-5.825 GHz). Analyses show that these proposed parasitic elements are more general than those proposed in [6][7][8][9][10][11][12] since the proposed parasitic elements have predictable positions, and these predictions can be generalized for all wide slot antennas. Moreover, their simple structure does not complicate the antenna analysis significantly.…”
Section: Introductionmentioning
confidence: 93%
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“…Another pair of radiating parasitic elements has been attached to the ground plane to radiate in such a way that cancels the radiation of the original UWB antenna at the WLAN band (5.15-5.825 GHz). Analyses show that these proposed parasitic elements are more general than those proposed in [6][7][8][9][10][11][12] since the proposed parasitic elements have predictable positions, and these predictions can be generalized for all wide slot antennas. Moreover, their simple structure does not complicate the antenna analysis significantly.…”
Section: Introductionmentioning
confidence: 93%
“…In recent years, researchers have used parasitic patches to generate band notches [6][7][8][9][10][11][12], instead of engraving slots, because the slots have more parameters such as the slot position and the slot width that need to be optimized than the parasitic patches which are less sensitive to these parameters. A parasitic arc-shaped strip opposite to the patch of a quasi-self-complementary monopole antenna has been used to protect the antenna from interference from Wireless Local Area Network (WLAN) [6], while an open loop resonator located on the back of a monopole antenna substrate has been used to reduce the WLAN interference [7].…”
Section: Introductionmentioning
confidence: 99%
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“…High notch-band-edge selectivity using embedded bandstop filter [6] is also proposed. Meander Tshaped patch and stepped impedance structure [7,8] can also be used for band-rejection applications. Additionally, embedding slots in radiating patch or in ground plane [9][10][11][12][13][14] is a effective method to obtain band-rejection characteristic.…”
Section: Introductionmentioning
confidence: 99%
“…The y-axis represents the gain per stage of the prototypes. The statics indicates the V-band one-stage cascode amplifier in CMOS 90 nm and 130 nm are about 5 dB and 4.5 dB, respectively [3][4][5]. The conventional common source (CS) topology typically needs the transistor in CMOS 90 nm technology to achieve about 5 dB-gain per stage in V-band [2,6].…”
Section: Introductionmentioning
confidence: 99%