An X-Band AlGaN/GaN MMIC Receiver Front-End

Thorsell, Mattias; Fagerlind, Martin; Andersson, Kristoffer; Billström, Niklas; Rorsman, Niklas

doi:10.1109/lmwc.2009.2035968

Cited by 47 publications

(18 citation statements)

References 5 publications

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“…At radio frequency (RF) the relatively new semiconductor gallium-nitride GaN outperforms the classical silicon (Si) and GaAs semiconductors. [3][4][5] The higher mobility of the two dimensional electron gas (2DEG) channel for GaN high electron mobility transistors (HEMTs) along with smaller gate lengths, result in lower NF. 6 It allows also the operation at higher frequencies, which is ideal for LNAs.…”

Section: Introductionmentioning

confidence: 99%

A broadband hybrid GaN cascode low noise amplifier for WiMax applications

Jarndal

Bassal

2018

Int J RF Microw Comput Aided Eng

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This article reports a Microstrip design for low noise amplifier (LNA) using a packaged commercial GaN‐on‐SiC high electron mobility transistor (HEMT). A cascode configuration with an inter‐stage matching and an independent biasing technique was used. A lumped elements design was first developed, analyzed, and simulated in ADS. Then the design was implemented using microstrip technology and simulated using the momentum EM simulation in ADS. The LNA is easy to fabricate, has a low cost, and can be easily modified for other applications. The proposed GaN LNA showed a gain of 13.5 dB with a noise figure (NF) of 3 dB from 2.8 to 3.8 GHz.

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Section: Introductionmentioning

confidence: 99%

A broadband hybrid GaN cascode low noise amplifier for WiMax applications

Jarndal

Bassal

2018

Int J RF Microw Comput Aided Eng

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“…As a wide band gap (3.5 eV) semiconductor, Gallium‐Nitride (GaN) has high electric breakdown field (350 V/μm) and high electron saturation velocity (2.7 × 10 7 cm/s). Therefore, GaN high electron mobility transistor (HEMT) and Monolithic Microwave Integrated Circuit (MMIC) show excellent power performance in DC‐to‐100 GHz range …”

Section: Introductionmentioning

confidence: 99%

“…Therefore, GaN high electron mobility transistor (HEMT) and Monolithic Microwave Integrated Circuit (MMIC) show excellent power performance in DC-to-100 GHz range. [1][2][3] With the deepening of the research, GaN tends to present a low noise figure and can tolerant higher RF input power levels per unit area than those in Gallium Arsenide (GaAs). For certain low noise amplification applications, GaN provides an advantage over GaAs because of its higher RF tolerance ability, which can avoid the use of limiter placed before the low noise amplifier (LNA).…”

Section: Introductionmentioning

confidence: 99%

18-31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T-gate high electron mobility transistor (HEMT) process

Tong

Zhang

et al. 2018

Int J RF Microw Comput Aided Eng

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GaN technology has attracted main attention towards its application to high‐power amplifier. Most recently, noise performance of GaN device has also won acceptance. Compared with GaAs low noise amplifier (LNA), GaN LNA has a unique superiority on power handling. In this work, we report a wideband Silicon‐substrate GaN MMIC LNA operating in 18‐31 GHz frequency range using a commercial 0.1 μm T‐Gate high electron mobility transistor process (OMMIC D01GH). The GaN MMIC LNA has an average noise figure of 1.43 dB over the band and a minimum value of 1.27 dB at 23.2 GHz, which can compete with GaAs and InP MMIC LNA. The small‐signal gain is between 22 and 25 dB across the band, the input and output return losses of the MMIC are less than −10 dB. The P1dB and OIP3 are at 17 dBm and 28 dBm level. The four‐stage MMIC is 2.3 × 1.0 mm2 in area and consumes 280 mW DC power. Compared with GaAs and InP LNA, the GaN MMIC LNA in this work exhibits a comparative noise figure with higher linearity and power handling ability.

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“…Andrei.et.al [17] reported LNA with NF below 2 dB and gain of 15 dB for a range of 1.7-2.3 GHz. Thorsell.et.al [18] presented integrated RF front end with gain more than 13 dB and NF of 3.5 dB at 11 GHz. Though these results reported here had high OIP3 and low NF, they do not have flat gain responses.…”

Section: Introductionmentioning

confidence: 99%

Design and analysis of GaN HEMT based LNA with CPW matching

Sarathkrishna

Balamurugan

Devi

et al. 2014

2014 Eleventh International Conference on Wireless and Optical Communications Networks (WOCN)

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GaN based devices are in great demand due to its rugged characteristics at extreme conditions. In this paper, design of GaN monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) with coplanar waveguide matching is presented to understand the key aspects of high gain, low noise figure and high linearity. The LNA can be used in base station technologies as frequency of interest is from 0.6 -3 GHz. It delivers gain of 23 dB and noise figure 0.3 dB and OIP3 upto 51 dBm. The linear performance presented here enables reconfigurable designs of LNA over multiple octaves of bandwidth.

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An X-Band AlGaN/GaN MMIC Receiver Front-End

Cited by 47 publications

References 5 publications

A broadband hybrid GaN cascode low noise amplifier for WiMax applications

A broadband hybrid GaN cascode low noise amplifier for WiMax applications

18-31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T-gate high electron mobility transistor (HEMT) process

Design and analysis of GaN HEMT based LNA with CPW matching

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