An X‐band CMOS power amplifier with a driver stage using a shot‐through current rejection technique

Abstract

In this study, we design an X‐band switching‐mode CMOS power amplifier using 0.13‐μm RF CMOS process. The power amplifier is composed of driver and power stages. In this study, we focus on the power consumption of the driver stage. To minimize power consumption, we propose a shot‐through current rejection technique for the Class‐D amplifier used as a driver stage of the CMOS power amplifier. We split the gate bias of the NMOS and PMOS of the Class‐D amplifier using DC‐blocking capacitors to control the shot‐through current. From the measured results, we successfully prove the feasibility of the proposed technique. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1159–1162, 2014

Differential 2.4‐GHz CMOS power amplifier using stacked NMOS, transformer, and PMOS structures to enhance reliability

“…To overcome the breakdown problems, various circuit design techniques were introduced as shown in Figure . One of the popular structures is the cascode structure illustrated in Figure A . However, although the breakdown issues could be moderated using the cascode structure, an additional control method is required to obtain acceptable reliability.…”

“…One of the popular structures is the cascode structure illustrated in Figure 1A. [7][8][9][10] However, although the breakdown issues could be moderated using the cascode structure, an additional control method is required to obtain acceptable reliability. More recently, the stacked structure shown in Figure 1B was introduced to obtain reliability using a submicron RFCMOS process.…”

Analysis of shoot‐through current of supply modulator for envelope‐tracking techniques

“…Recently, the envelope-tracking (ET) technique has become a popular method to enhance the efficiency of the RF front-end system [1][2][3][4][5][6][7][8][9][10][11][12]. The ET technique can efficiently reduce the power consumption in linear RF power amplifiers, which consume the greatest amount of electric power among the circuits of the RF front-end [13][14][15][16][17][18]. Although there have been various obstacles to complete the ET technique, many meaningful works have been proposed to improve and analyze its feasibility [5][6][7][8][9][10][11][12]19,20].…”