A full X-band CMOS amplifier with wideband class-E harmonic matching

Abstract

A fully integrated medium power amplifier operating over the entire X‐band is demonstrated in a 0.11‐μm CMOS technology. A double‐resonance technique is used for wideband input matching. At the output load, wideband class‐E harmonic matching is performed for up to the third harmonic frequency to achieve high output power and efficiency. The amplifier exhibits measured small‐signal gain exceeding 7.6 dB over a wide 3‐dB bandwidth from 7.6 to 13.7 GHz. The output power and power added efficiency (PAE) are higher than 10.7 dBm and 15%, respectively, at the entire X‐band (8–12 GHz). The peak PAE is 20.2% with an output power of 12.4 dBm at 10 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:645–649, 2015

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