1996
DOI: 10.1007/bf00372203
|View full text |Cite
|
Sign up to set email alerts
|

An X-ray photoelectron spectroscopic investigation into the chemical structure of deposits formed from hexamethyldisiloxane/ oxygen plasmas

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

8
34
1

Year Published

1997
1997
2022
2022

Publication Types

Select...
9
1

Relationship

0
10

Authors

Journals

citations
Cited by 102 publications
(43 citation statements)
references
References 14 publications
8
34
1
Order By: Relevance
“…There were four component subpeaks representing Si–O bonding: (–O) 1 : [(CH 3 ) 3 SiO 1/2 ], (–O) 2 : [(CH 3 ) 2 SiO 2/2 ], (–O) 3 : [(CH 3 )SiO 3/2 ], and (–O) 4 : [SiO 4/2 ]. The (–O) 1 peak is centred at 101.5 eV, (–O) 2 is centred at 102.1 eV, (–O) 3 is centred at 102.8 eV, and (–O) 4 is centred at 103.4 eV 35 . The rightward shift of the Si 2p peak indicated that IB irradiation transformed atoms at the PDMS surface into higher oxidation states.…”
Section: Resultsmentioning
confidence: 97%
“…There were four component subpeaks representing Si–O bonding: (–O) 1 : [(CH 3 ) 3 SiO 1/2 ], (–O) 2 : [(CH 3 ) 2 SiO 2/2 ], (–O) 3 : [(CH 3 )SiO 3/2 ], and (–O) 4 : [SiO 4/2 ]. The (–O) 1 peak is centred at 101.5 eV, (–O) 2 is centred at 102.1 eV, (–O) 3 is centred at 102.8 eV, and (–O) 4 is centred at 103.4 eV 35 . The rightward shift of the Si 2p peak indicated that IB irradiation transformed atoms at the PDMS surface into higher oxidation states.…”
Section: Resultsmentioning
confidence: 97%
“…The oxygen O 1s peaks presented for the three plasma polymer layers in Fig. 11 exhibit a shift of 1.3 eV towards high binding energy (which is the same for the Si 2p peak), indicating a change in silicon-oxygen chemistry 51 : in the absence of oxygen in the is formed in the presence of oxygen (O 1s peak appeared at about 533.5 eV).…”
mentioning
confidence: 75%
“…One possible explanation is that the behaviour of oxygen binding to sulfur could be similar to silicon; the main binding energy shift occurs in the bonding of the first oxygen to the silicon (Alexander et al 1996). Addition of a second and third oxygen atom only causes a small shift in the silicon binding energy (Alexander et al 1996).…”
Section: Sulfur-containing Reference Materialsmentioning
confidence: 99%