Analog baseband IC for use in direct conversion W-CDMA receivers

Goldfarb, M.; Palmer, William F.; Murphy, Tom; Clarke, Ryan; Gilbert, B.; Itoh, Kenji; Katsura, T.; Hayashi, Ryoji; Nagano, Hajime

doi:10.1109/rfic.2000.854421

Cited by 19 publications

(3 citation statements)

References 2 publications

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“…It seems that especially the need for high integration restricts the receiver architecture to the zero-IF structure. Examples can be found in [21], [22], [23] and [24]. Al1 these receivers are designed using standard BiCMOS processes.…”

Section: Rfics For Umts: Current Developmentsmentioning

confidence: 99%

System-defined design and performance of RFICs for W-CDMA mobile radio terminals

Maurer¹,

Lanschutzer²,

Springer³

et al. 2001

Elektrotech. Inftech.

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Third generation wideband CDMA (W-CDMA) systems like UMTS will add broadband data to support video, Intemet access, and other high speed services for untethered devices. They are currently deployed in Japan and will be introduced in Europe in 2002. Despite sufficient RF performance has been assumed in the standardization bodies, especially in mobile devices the RF part is still a limiting factor for the overall system characteristics. Only an integral design approach including both RF and baseband functionalities makes it possible to achieve analog front-ends with sufficient performance. This paper reviews transceiver architectures with respect to W-CDMA and presents some of the recent silicon-based radio frequency integrated circuits for mobile terminals.

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Section: Rfics For Umts: Current Developmentsmentioning

confidence: 99%

System-defined design and performance of RFICs for W-CDMA mobile radio terminals

Maurer¹,

Lanschutzer²,

Springer³

et al. 2001

Elektrotech. Inftech.

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“…To ease the dynamic range requirements of the analog-to-digital converter (ADC) in the receiving channel, the gain of the receiving path should be adjustable to provide a stable, large-swing output over a span of input signal magnitudes. A receiving signal strength indicator (RSSI) is used extensively in wireless transceivers [1,2] to provide the information necessary to adjust receiver gain. The ability for RSSI circuits to monitor the presence of signals is also useful in power management applications.…”

Section: Introductionmentioning

confidence: 99%

Precise RSSI with High Process Variation Tolerance

Yang

Mason

2007

2007 IEEE International Symposium on Circuits and Systems (ISCAS)

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Abstract-A receiving signal strength indicator (RSSI) built with transconductance amplifiers is presented. The RSSI achieves high tolerance to process variations by utilizing the unique nature of branch currents in a transconductance amplifier. These branch currents are used to implement a current-mode rectifier and amplitude clipping circuit that are tolerant of process variations. An on-chip offset control loop permits the entire RSSI to be realized with only one external component. In 0.18μm CMOS with a 1.8V supply, the RSSI draws 2.5mA and provides 80dB of offset suppression and more than 70dB of log-linear range with less than +/-2dB error due to process variation.

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“…The well-known DC problem of zero-IF receivers is relaxed in the W-CDMA standard, because the wide bandwidth of the signals (4 MHz) with a rather flat power spectral density enables AC-coupling of the signal path in the baseband. Implementing a high-pass filter with 1-4kHz comer frequency leads to negligible performance degradation of the homodyne receiver [4].…”

Section: Introductionmentioning

confidence: 99%

A SiGe-bipolar down-conversion mixer for a UMTS zero-IF receiver

Pretl¹,

Schelmbauer²,

Adler³

et al.

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124)

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A down-conversion IIQ-mixer for a W-CDMA zero-IF receiver that is implemented in a 75 GHz ft bipolar SiGe technology is reported. Including IIQ-generation and biasing, it consumes a supply current of 18 mA from a 2.7 V supply. A voltage gain of 10.2 dB and an IIP3 of 8 dBm have been achieved. Using frequency division to derive the I-and Qphases for the local oscillator signals results in LO-RF leakage lower than -68 dBm and an IIP2 better than 56 dBm. DC offsets at the I and Q mixer baseband outputs are typically below 5 mV. Table 1 : UMTS key specifications for the FDD mode.

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Analog baseband IC for use in direct conversion W-CDMA receivers

Cited by 19 publications

References 2 publications

System-defined design and performance of RFICs for W-CDMA mobile radio terminals

System-defined design and performance of RFICs for W-CDMA mobile radio terminals

Precise RSSI with High Process Variation Tolerance

A SiGe-bipolar down-conversion mixer for a UMTS zero-IF receiver

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