Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study

Tamersit, Khalil; Jooq, Mohammad Khaleqi Qaleh; Moaiyeri, Mohammad Hossein

doi:10.1016/j.physe.2021.114915

Cited by 27 publications

(18 citation statements)

References 55 publications

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“…Figure 11 a shows an EDJL-CNTTFET design with a MFMIS structure. Note that the MFMIS can be integrated as a coaxial gate [ 42 ] or used as separate gating system ideally connected by a wire [ 25 , 38 , 41 , 43 ]. From simulation point of view, the ferroelectric field-effect transistors endowed with a MFMIS system can be treated as a baseline field-effect transistor in series with a ferroelectric capacitor [ 25 , 40 , 41 , 42 , 43 , 44 ].…”

Section: Resultsmentioning

confidence: 99%

“…Note that the MFMIS can be integrated as a coaxial gate [ 42 ] or used as separate gating system ideally connected by a wire [ 25 , 38 , 41 , 43 ]. From simulation point of view, the ferroelectric field-effect transistors endowed with a MFMIS system can be treated as a baseline field-effect transistor in series with a ferroelectric capacitor [ 25 , 40 , 41 , 42 , 43 , 44 ]. Therefore, conceptually, the numerical modeling of the negative capacitance (MFMIS) nanodevices is divided into two parts [ 45 ].…”

Section: Resultsmentioning

confidence: 99%

“…After the self-consistency, the gate charge ( Q G ) is numerically extracted and used to compute the voltage across the FE material ( V FE ), using the 1-D steady-state Landau–Khalatnikov equation, which is given as follows [ 34 ]: V FE = 2 αt FE Q G + 4 βt FE Q G 3 + 6 γt FE Q G 5 where t FE is the FE thickness; and (α, β, and γ) are the FE Landau coefficients, which are chosen to be as those of the Al-doped HfO 2 FE parameters [ 25 , 44 , 45 , 46 ]. After computing V FE , the external gate voltage ( V GS ) of the EDJL-CNTTFET is normally computed by using the following equation [ 25 , 39 , 40 , 41 , 42 , 43 , 44 , 45 ]: V GS = V INT + V FE where V INT is the internal metal-gate voltage considered in the baseline self-consistent quantum simulation. For more computational information regarding the quantum simulation of ultrascaled MFMIS FE-FETs, we refer the reader to our previous works [ 19 , 25 , 45 ].…”

Section: Resultsmentioning

confidence: 99%

“…In the literature, the common quantum simulation method used to propose, investigate, and assess advanced nanoscale CNTFETs with full soundness and high accuracy is the self-consistent computation between the non-equilibrium Green’s function formalism and the Poisson equation [ 22 , 23 , 24 , 25 ]. The main assets of this quantum simulation method are its ability to consider most of electrostatic features and the main quantum transport phenomena, including the band-to-band and direct source-to-drain tunneling mechanisms [ 22 , 23 , 24 , 25 , 26 ]. For this reason, we adopted the NEGF simulation in the present computational work.…”

Section: Simulation Approachmentioning

confidence: 99%

“…All NEGF simulations were performed by using MATLAB software. For more information and details regarding the NEGF-based quantum mechanical simulation of nanoscale carbon-nanotube FETs, we refer to our previous relevant works [ 24 , 25 , 28 , 29 ], where the validation of the used NEGF simulation against some experimental and theoretical data was reported.…”

Section: Simulation Approachmentioning

confidence: 99%

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Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

et al. 2022

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The low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons. In this article, the performance of nanoscale junctionless carbon nanotube tunneling field-effect transistors (JL CNTTFETs) is greatly improved by using the synergy of electrostatic and chemical doping engineering. The computational investigation is conducted via a quantum simulation approach, which solves self-consistently the Poisson equation and the non-equilibrium Green’s function (NEGF) formalism in the ballistic limit. The proposed high-performance JL CNTTFET is endowed with a particular doping approach in the aim of shrinking the band-to-band tunneling (BTBT) window and dilating the direct source-to-drain tunneling window, while keeping the junctionless paradigm. The obtained improvements include the on-current, off-current, ambipolar behavior, leakage current, I60 metric, subthreshold swing, current ratio, intrinsic delay, and power-delay product. The scaling capability of the proposed design was also assessed, where greatly improved switching performance and sub-thermionic subthreshold swing were recorded by using JL CNTTFET with 5 nm gate length. Moreover, a ferroelectric-based gating approach was employed for more enhancements, where further improvements in terms of switching performance were recorded. The obtained results and the conducted quantum transport analyses indicate that the proposed improvement approach can be followed to improve similar cutting-edge ultrascaled junctionless tunnel field-effect transistors based on emerging atomically thin nanomaterials.

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