Analog/RF Performance Projection of Ultra-Steep Si Doped HfO2 Based Negative Capacitance Electrostatically Doped TFET: A Process Variation Resistant Design

Abstract

The incorporation of Si doped HfO 2 in negative capacitance electrostatically doped TFET realizes ultra-steep and process variation resistant structure. Here, Si:HfO 2 is the gate stack ferroelectric material is used in conjunction with a high-K gate dielectric HfO 2 /TiO 2 . The conceptualization of intrinsic gate voltage amplification due to the alignment of ferroelectric dipoles comprehends the negative capacitance (NC) behavior. Moreover, the work-function difference between the source/drain electrodes and the silicon induces electrostatic doping. Thus, the detrimental doping related issues, heavy doping governed mobility degradation and statistical random dopant fluctuations (RDFs) can be eliminated and it results in more process variations immune design. This work has explored the impact of the symmetric and asymmetric structure of the considered devices on both the drain and source sides, in terms of the oxide thickness between the electrodes and the Si body. Here, analog/RF performance estimation is also carried out for the parameters such as transconductance (g m ), output conductance (g d ), unity gain frequency (f T ), intrinsic gain (A V ), transconductance frequency product (TFP), and gain frequency product (GFP), etc. Our study reveals that Si:HfO 2 ferroelectric gate stack with TiO 2 dielectric shows better device performance than Si:HfO 2 ferroelectric gate stack with HfO 2 dielectric for both dc as well as ac performance.

Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

“…A comparison of the transfer characteristics as reported in Ref. [23] with the results of the proposed model.…”

“…Salahuddin and Datta 17 claimed that introducing a ferroelectric insulator into standard FETs can also bypass the lower voltage operation limit, resulting in a significant gain and amplified voltage 18,19 . Numerous types of research have been extensively investigated to analyze the behavior of FE‐FETs, and different topologies have already been developed and researched for a better understanding of the core characteristic of negative capacitance, including metal ferroelectric insulator semiconductor (MFIS), metal ferroelectric metal insulator semiconductor (MFMIS), double gate negative capacitance FET (DGNCFET), double gate ferroelectric junctionless (DGFJL) transistor, and negative capacitance TFET (NCTFET) 20–23 . The hysteresis transition at the source end dipole, that is, the capacitance divider produced thereby ferroelectric and internal MOS capacitances, determines the beginning of hysteresis in MFIS 24 .…”

Design and Evaluation of a Double-Gate Tunnel Field Effect Transistor for the Detection of Breast Cancer Cells

“…This device employs two nanocavities (NC) and a dual metal gate positioned below the two gate electrodes to increase detecting sensitivity. TFET devices are preferred over CMOS technology biosensors [18] due to their intrinsic band-to-band tunneling phenomenon and lesser leakage current with subthreshold slope (SS) [15][16][17][18].…”

Crystallinity Effect on Electrical Properties of PEALD–HfO2 Thin Films Prepared by Different Substrate Temperatures

“…Hafnium oxide (HfO 2 ) is a promising material for its unique properties, such as high dielectric constant (k), high breakdown electric field, large band gap, excellent surface passivation performance, good stability, high refractive index and wide range of ultraviolet–infrared transparency region [ 1 , 2 ]. As a consequence of these properties, HfO 2 film has captivated a tremendous amount of research interest for its applications in a variety of fields, such as anti-reflection films for ultraviolet lasers [ 3 , 4 ], high-k material in capacitors [ 5 , 6 ], non-volatile memories [ 7 ] and gate oxide in MOSFETs [ 8 ]. HfO 2 film has wide applicability to both electronics and optoelectronics.…”