Analog techniques for reliable organic circuit design on foil applied to an 18dB single-stage differential amplifier

Marien, Hagen; Steyaert, Michiel; Veenendaal, E. van; Heremans, Paul

doi:10.1016/j.orgel.2010.05.006

Cited by 37 publications

(19 citation statements)

References 16 publications

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“…2 Note that most semiconductors may only allow either n-channel operation (resulting in n-channel TFTs) or p-channel operation (leading to p-channel TFTs). 3 Depending on whether a TFT is n-channel or pchannel, either of the symbols in Figure 2.1c is used to represent it schematically. The two symbols comprise an arrow that denotes the direction of current flow in accumulation: from source to drain in a p-channel TFT and from drain to source in the n-channel counterpart.…”

Section: Operation and Fundamental Device Parametersmentioning

confidence: 99%

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

Pecunia

Fattori

Abdinia

et al. 2018

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Recent years have witnessed significant research efforts in flexible organic and amorphous-metal-oxide analogue electronics, in view of its formidable potential for applications such as smart sensor systems. This Element provides a comprehensive overview of this growing research area. After discussing the properties of organic and amorphous-metal-oxide technologies relevant to analogue circuits, this Element focuses on their application to two key circuit blocks: amplifiers and analogue-to-digital converters. The Element thus provides a fresh look at the evolution and immediate opportunities of the field, and identifies the remaining challenges for these technologies to become the platform of choice for flexible analogue electronics.

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Section: Operation and Fundamental Device Parametersmentioning

confidence: 99%

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

Pecunia

Fattori

Abdinia

et al. 2018

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“…11 (a) Common-source gain stage of an amplifier (b) sketch of different type of loads passing through the same bias point Fig. 12 Gain stage of an amplifier with (a) feedback load [22], [24] (b) boost strap load [20] > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 9 Here, V H and V B are external bias voltages and Vo is the output of the gain stage (which is also the source terminal voltage of load). As the feedback voltage contains the output, this topology has a positive feedback.…”

Section: ) Analog Gain Stage With Mono-type Tftsmentioning

confidence: 99%

“…Another approach using positive feedback has been reported by H.Marien et al [20]. The load of their gain stage is designed with boost strap structure.…”

Section: ) Analog Gain Stage With Mono-type Tftsmentioning

confidence: 99%

“…Another aspect of DCI stems from the material and processing attributes of the TFT which usually come with specific, and often self-limiting, properties. For example, in analog front-end and digital designs, alternative circuit architectures are needed to match the properties of the CMOS counterpart [20]- [24]. This will be discussed in Section IV along with II.…”

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confidence: 99%

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Device-Circuit Interactions and Impact on TFT Circuit-System Design

Cheng

Lee

Chaji

et al. 2017

IEEE J. Emerg. Sel. Topics Circuits Syst.

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This paper reviews the importance of device-circuit interactions (DCI) and its consideration when designing thin film transistor circuits and systems. We examine temperature-and process-induced variations and propose a way to evaluate the maximum achievable intrinsic performance of the TFT. This is aimed at determining when DCI becomes crucial for a specific application. Compensation methods are then reviewed to show examples of how DCI is considered in the design of AMOLED displays. Other designs such as analog front-end and image sensors are also discussed, where alternate circuits should be designed to overcome the limitations of the intrinsic device properties. Manuscript received, xxx.2016 Index Terms-Small signal model, s parameter, TFT, cutoff frequency, V T shift

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“…This DG architecture also enables control of threshold voltage (V TH ) of the OTFTs [7]. These features are significant for realizing high-performance and robust organic electronics [8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors

et al. 2018

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Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and robust organic electronics. Electrical behaviors of high-voltage (>10 V) DGOTFTs have been studied: however, the performance analysis in low-voltage DGOTFTs has not been reported because fabrication of low-voltage DGOTFTs is generally challenging. In this study, we successfully fabricated low-voltage (<5 V) DGOTFTs by employing thin parylene film as gate dielectrics and visualized the charge carrier distributions in low-voltage DGOTFTs by a simulation that is based on finite element method (FEM). The simulation results indicated that the dual-gate system produces a dual-channel and has excellent control of charge carrier density in the organic semiconducting layer, which leads to the better switching characteristics than the single-gate devices.

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Analog techniques for reliable organic circuit design on foil applied to an 18dB single-stage differential amplifier

Cited by 37 publications

References 16 publications

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

Device-Circuit Interactions and Impact on TFT Circuit-System Design

Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors

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