Analyses and Experiments of the Schottky Contact Super Barrier Rectifier (SSBR)

Chen, Wensuo; Liao, Ruijin; Zeng, Zheng; Zhang, Peijian; Zhong, Yi; Tan, Kaizhou; Chen, Hao; Zhang, Bo

doi:10.1109/led.2017.2703597

Cited by 21 publications

(8 citation statements)

References 14 publications

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“…The Schottky model also accounts for field-dependent barrier-lowering mechanisms, arising from image forces and possible static dipole layers at the metal-semiconductor interface. The results of this simulation method were compared with experiment results, and good agreements were confirmed in the case of the planar gate structure of NEL-SSBR [14]. During simulation, conventional SBD, conventional TMBS and vertical SSBR [17] are selected as the contrast structures.…”

Section: Resultsmentioning

confidence: 93%

“…According to the operation of SBR/SSBR [14]- [17], [28], [29], as a result of body effect, the threshold voltage of top vertical MOS channel is reduced [29]. Therefore, the low turn-on voltage for the proposed TMB-SSBR is obtained.…”

Section: Device Structurementioning

confidence: 99%

“…Recently, the concept of Schottky contact super barrier rectifier (SSBR) has been proposed and verified by simulation and experiment results by our group [14]- [17]. SSBR, which is different from SBR or MOS Channel Diode [18]- [21], shows good performances in simple manufacturing process, small forward voltages, low reverse leakage currents and high-temperature reliability.…”

Section: Introductionmentioning

confidence: 98%

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A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier

Zhang

Zhu

Chen

2024

IEICE Trans. Electron.

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In this paper, a novel trench MOS barrier Schottky contact super barrier rectifier (TMB-SSBR) is proposed by combining the advantages of vertical SSBR and conventional TMBS. The operation mechanism and simulation verification are presented. TMB-SSBR consists of MOS trenches with a vertical SSBR grid which replaces the Schottky diode in the mesa of a TMBS. Due to the presence of top p-n junction in the proposed TMB-SSBR, the image force barrier lowering effect is eliminated, the pinching off electric field effect by MOS trenches is weakened, so that the mesa surface electric field is much larger than that in conventional TMBS. Therefore, the mesa width is enlarged and the n-drift concentration is slightly increased, which results in a low specific on-resistance and a good tradeoff between reverse leakage currents and forward voltages. Compared to a conventional TMBS, simulation results show that, with the same breakdown voltage of 124 V and the same reverse leakage current at room temperature, TMB-SSBR increases the figure of merit (FOM, equates to V 2 B /R on,sp ) by 25.5%, and decreases the reverse leakage by 33.3% at the temperature of 423 K. Just like the development from SBD to TMBS, from TMBS to TMB-SSBR also brings obvious improvement of performance.

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Section: Resultsmentioning

confidence: 93%

Section: Device Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

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A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier

Zhang

Zhu

Chen

2024

IEICE Trans. Electron.

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“…[13][14][15][16] The MOS-channel diode can effectively control the injection of the minority carriers and decrease the reverse recovery charge (Q RR ), which is widely used in power devices including rectifier in the recent years. [17][18][19][20][21] In this paper, a power MOSFET with the integration of the trench split gate and dummy gate (SD-MOS) is proposed to improve the dynamic properties by the decrease of the gateto-drain charge (Q GD ), turn-off energy loss (E off ) and reverse recovery charge (Q RR ). The simulation electrical behaviors and working mechanisms are investigated by the TCAD SEN-TAURUS, where physics models including the EffecticeIntrin-sicDensity, Mobility (HighFieldSaturation Enormal PhuMob DopingDependence), Recombination (SRH Auger Avalanche) are adopted.…”

Section: Introductionmentioning

confidence: 99%

An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics

et al. 2023

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A power MOSFET with integrated Split Gate and Dummy Gate (SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS. The split gate is surrounded by the Source and shielded by the dummy gate. Consequently, the coupling area between the split gate and the Drain electrode is reduced, thus the Gate-to-Drain charge (Q GD), reverse transfer capacitance (C RSS) and turn-off loss (E off) are significantly decreased. Moreover, the MOS-Channel Diode is controlled by the dummy gate with ultra-thin gate oxide tox, which can be turned on before the parasitic P-base/N-drift diode at the reverse conduction, then the majority carriers are injected to the N-drift to attenuate the minority injection. Therefore, the reverse recovery charge (Q RR), time (T RR) and peak current (I RRM) are effectively reduced at the reverse freewheeling state. Additionally, the Specific On-Resistance (R on,sp) and Breakdown Voltage (BV) are also studied to evaluate the static properties for the proposed SD-MOS. The simulation results show that the Q GD of 6 nC/cm2, the C RSS of 1.1 pF/cm2 at the V DS of 150 V, the Q RR of 1.2 μC/cm2 and the R on,sp of 8.4 mΩ·cm2 are obtained, thus the Figures Of Merit (FOM) including Q GD × R on,sp of 50 nC·mΩ， E off × R on,sp of 0.59 mJ·mΩ and the Q RR × R on,sp of 10.1 μC·mΩ are achieved for the proposed SD-MOS.

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“…For high-voltage applications in modern power electronic circuits, the super barrier rectifier (SBR) without unreliable Schottky contact has excellent performance and reliability. As a majority carrier device, the main principle of SBRs is to create an adjustable potential barrier in the MOS channel (named super barrier) [1][2][3][4][5][6][7] in order to improve the electrical characteristics. Because of its larger channel density, the trench-gate-type SBR (TSBR) removing JFET region can have ultralow forward voltages.…”

Section: Introductionmentioning

confidence: 99%

Investigations on Breakdown Voltage of Trench-gate-type Super Barrier Rectifier with Stepped Oxide

Wang

et al. 2022

J. Phys.: Conf. Ser.

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A novel trench-gate-type super barrier rectifier (TSBR) with stepped oxide (SO-TSBR) is proposed and researched by device simulator. As an improved TSBR structure, the proposed SO-TSBR with high breakdown voltages be effective in achieving low forward voltage drop. Simulations have demonstrated the two-dimensional charge coupling in the N-drift region resulting in an optimal electric field distribution. The 280 V SO-TSBR used for the numerical simulations decreases the on-state drop by 26.6% at the forward current density of 2.5 A/cm2 than that of the conventional TSBR. The SO-TSBR with deep trench structure reduces further the forward voltage drop by 11.0% at the forward current density of 20 A/cm2.

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Analyses and Experiments of the Schottky Contact Super Barrier Rectifier (SSBR)

Cited by 21 publications

References 14 publications

A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier

A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier

An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics

Investigations on Breakdown Voltage of Trench-gate-type Super Barrier Rectifier with Stepped Oxide

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