Analyses of Thermally Stimulated Current Curves with No Peaks

Abstract

A theory that enables one to accurately estimate three parameters, namely, an energetic depth of carrier trap site E t, an escape frequency factor ν and a charge carrier density n t, from thermally stimulated current (TSC) curves with no peaks is proposed. Generally, these three parameters could not be evaluated from any TSC datum without peak coordinates. Such TSC data are usually measured experimentally in order to separate signals from each other in various composite cases. Our proposed theory makes it possible to evaluate several sets of three parameters. The proposal is a method to compensate the charges lost in experiments. Three types of charge compensation processes are reported in detail. The accuracy of evaluation of each of the three parameters is very good and the E t values of three significant figures could be obtained by numerical analyses.

Deep Traps Distribution in TlInS2Layered Crystals

“…TSC measurements have been extensively carried out in the past in the crystals which is very useful to fabricate high quality devices [18][19][20][21][22]. There are a few studies in the literature in which TSC technique is used to determine the trapping parameters in TlInS 2 single crystals.…”

Determination of trapping parameters in n-Ga4Se3S by thermally stimulated current measurements

“…In this respect, the thermally stimulated current (TSC) method bears particular importance. The results of theoretical and experimental studies about TSC in semiconductors have been summarised in the literature [8][9][10][11][12]. A TSC study on GaSe x S 1-x solid compounds grown from the vapour using the chemical transport method was performed in the temperature range 80-320 K by Micocci et al [13] for several values of the parameter x ranging from 0 to 1, and the activation energies of various trapping centres revealed.…”

Thermally stimulated currents in layered semiconductor Tl4In3GaS8

“…In this regard, the thermally stimulated current (TSC) method bears particular importance. The results of theoretical and experimental studies about TSC in semiconductors were summarized in [9][10][11][12][13]. Previously we have studied TSC in TlInS 2 crystals and revealed a trap level with an activation energy of 12 meV [14].…”