Thermally stimulated currents in layered semiconductor Tl₄In₃GaS₈

Abstract

We have carried out thermally stimulated current measurements on as-grown Tl 4 In 3 GaS 8 layered single crystals in the temperature range 10-90 K with different heating rates of 0.10-0.30 K s -1 . The data were analysed by curve fitting, heating rates and isothermal decay methods. The results were in good agreement with each other. Experimental evidence was found for one trapping centre in Tl 4 In 3 GaS 8 crystal with an activation energy of 12 meV. The capture cross section and concentration of the traps were found to be 5.4 × 10 −25 cm 2 and 3.3 × 10 14 cm −3 , respectively. Analysis of the thermally stimulated current data at different light excitation temperatures leads to a value of 8 meV/decade for the trap distribution.

Low temperature thermally stimulated current measurements in N-implanted TlGaSeS layered single crystals

“…Attempt-to-escape frequency (ν ) and capture cross section (S t ) of the revealed traps can be determined using the values E t and peak maximum temperatures (T mA ¼20 K and T mB ¼234 K), obtained from the curve fit analysis, by the expressions [22] v…”

Shallow trapping center parameters in as‐grown AgIn5S8 crystals determined by thermally stimulated current measurements

“…Determination of the photoconductivity gain for a sample under the specified experimental conditions is a particular problem. Here we present an approach to evaluate photoconductivity gain by utilizing photoconductivity decay experiments [23]. When the light falls on the sample, electron-hole pairs are generated which change the material conductivity.…”

Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals

“…From transmission measurements carried out in the temperature range of 10-300 K, the rate of change of the indirect band gap with temperature was found to be g ¼ -4.70 Â 10 À4 eV/K. Recently, we have carried out thermally stimulated current (TSC) measurements on Tl 4 In 3 GaS 8 crystal in the temperature range of 10-90 K [10]. Experimental evidence was found for one trapping center with an activation energy of 12 meV.…”