Shallow trapping center parameters in as‐grown AgIn₅S₈ crystals determined by thermally stimulated current measurements

Abstract

Thermally stimulated current measurements were carried out on as-grown AgIn 5 S 8 single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 K/s. The analysis of the data revealed the electron trap level located at 5 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 2.2 × 10 -25 cm 2 for capture cross section and 6.1 × 10 12 cm -3 for the concentration. It was concluded that in this center retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.

One-pot synthesis and visible light photocatalytic activity of monodispersed AgIn5S8 microspheres

“…A lot of methods, such as pulsed laser deposition, hot-press method, single crystal thermal evaporation and chemical bath deposition have been selected to prepare AgIn 5 S 8 [22,[27][28][29][30][31][32][33][34]. However, the procedures are relatively complicated and the apparatus used is expensive.…”