Analyses on Cleanroom-Free Performance and Transistor Manufacturing Cycle Time of Minimal Fab

Khumpuang, Sommawan; Imura, Fumito; Hara, Shiro

doi:10.1109/tsm.2015.2487324

Cited by 42 publications

(25 citation statements)

References 6 publications

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“…Even if larger substrates ultimately prove difficult to develop, "Minimal Fab" strategies for manufacturing on 12 mm diameter substrates are also being considered as viable options. [109][110][111] The second breakthrough is efficient doping. Doped diamond layers are generally prepared by gas-phase doping during plasma-enhanced CVD growth on single-crystal diamond substrates.…”

Section: Diamondmentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

1,051

463

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Section: Diamondmentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

1,051

463

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“…The compact, automatically controlled, and fast-controlled rf plasma system is also useful for terrestrial industrial plasma devices such as plasma sputtering and etching reactors in a recently developed new concept of the semiconductor manufacturing system, being called "Minimal Fab" [12,13]. In the traditional semiconductor manufacturing system, the diameter of the silicon wafer has been increased to yield sufficient economic benefit by low-mix high-volume production in the large-scale manufacturing system (called "Mega Fab").…”

Section: Introductionmentioning

confidence: 99%

Fast and Automatic Control of a Frequency-Tuned Radiofrequency Plasma Source

2020

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A frequency-tuned radiofrequency (rf) plasma source is automatically controlled to minimize the rf power reflection and to maintain the constant net rf power corresponding to the forward power minus the reflected power. The experiment is performed with a power amplifier operational for the frequency of 37-43 MHz, a compact helicon source consisting of a loop antenna, a solenoid, and an insulator tube. The rf power is supplied to the rf antenna via an impedance matching circuit consisting of only fixed small ceramic capacitors. It is demonstrated that the reflection coefficient of the rf power is minimized within ∼10 ms, and the net power is successfully maintained at a constant level.

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“…The process development of the laser-via introduced by Minimal Fab (MF) [27][28][29][30] is suitable for a low-volume production as shown in Fig. 1 (b) [31].…”

Section: Introductionmentioning

confidence: 99%

“…1 (b) [31]. Since the MF performs half-inch wafer process one by one as a single chip, the device and packaging process is low cost and high throughput [28]. Material of the electrode pads, via configuration, and laser-via process for MF have been evaluated for further reduction of the via contact-resistance [31].…”

Section: Introductionmentioning

confidence: 99%

Via Interconnections for Half-Inch Packaging of Electronic Devices Using Minimal Fab Process Tools

Imura

Inoue

Khumpuang

et al. 2020

J. Photopol. Sci. Technol.

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Reliability of a laser-via formation process for Fan-Out Wafer Level Packaging (FOWLP) technology was evaluated using Minimal Fab (MF) that is cleanroom-less and uses a half inch wafer. After a die-bonding and a compression molding process of a half-inch Si wafer, the laser-vias were formed with a diameter of 150 m by irradiation of an ultraviolet (UV) pulsed laser beam. The measured thickness of the epoxy mold compound (EMC) was 93.9 m of average with 1.9% of the variation at 1  in the half-inch wafer. The bottom diameter of the vias was 51.8 m and 9.0% of the variation at 1 . In order to evaluate the contact-resistance of the vias, Cross-Bridge Kelvin Resistor (CBKR) test-structures were fabricated by the die-bonding the Si wafer with Al or Cu/Ti pads to a 42 alloy substrate, the compression molding, the laser-via, and the redistribution layer (RDL) formation. In case of the Al pads, the via conduction was obtained only in the outer peripheral area. On the other hand, in case of the Cu/Ti pad, the all via conductions were obtained. The high-yield via-interconnections were achieved by using Cu/Ti pads.

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Analyses on Cleanroom-Free Performance and Transistor Manufacturing Cycle Time of Minimal Fab

Cited by 42 publications

References 6 publications

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Fast and Automatic Control of a Frequency-Tuned Radiofrequency Plasma Source

Via Interconnections for Half-Inch Packaging of Electronic Devices Using Minimal Fab Process Tools

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