Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors

Cho, Seongjae; Lee, Jae Sung; Kim, Kyung Rok; Park, Byung‐Gook; Harris, James S.; Kang, In Man

doi:10.1109/ted.2011.2167335

Cited by 90 publications

(75 citation statements)

References 29 publications

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“…The cutoff frequency obtained for a p-n-p-n TFET is even higher in comparison to recently reported values for a GAA p-in TFET [29], because of the enhancement in the transconductance (g m ) and reduction in C gd for a p-n-p-n architecture in comparison to p-i-n. The cut-off frequency (f T ) shows a decreasing trend for V gs >0.8V, although in case of TFET, the transconductance g m does not saturate.…”

Section: Capacitance Voltage Characteristicscontrasting

confidence: 68%

Device and Circuit Level Performance Comparison of Tunnel FET Architectures and Impact of Heterogeneous Gate Dielectric

Narang¹,

Saxena²,

Gupta³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Section: Capacitance Voltage Characteristicscontrasting

confidence: 68%

Device and Circuit Level Performance Comparison of Tunnel FET Architectures and Impact of Heterogeneous Gate Dielectric

Narang¹,

Saxena²,

Gupta³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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“…Figure 8 shows the transfer curves of a tri-gate TFET for four different values of channel length as 15, 30, 50, and 90 nm with constant t ox of 1 nm and ε ox of 3.9ε 0 at V d = 0.01V. The impact of scaling the channel length on the transfer curves is negligible because effective tunneling width is constant with varying channel length [5,16,49]. The variation of the subthreshold I ds − V g characteristic with channel length shows good agreement with the numerical results for a tri-gate TFET, confirming the accuracy of our model.…”

Section: Model Validation Results and Discussionmentioning

confidence: 99%

A 3D analytical modeling of tri-gate tunneling field-effect transistors

2016

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In this paper, a three-dimensional (3D) analytical solution of the electrostatic potential is derived for the trigate tunneling field-effect transistors (TG TFETs) based on the perimeter-weighted-sum approach. The model is derived by separating the device into a symmetric and an asymmetric double-gate (DG) TFETs and then solving the 2D Poisson's equation for these structures. The subthreshold tunneling current expression is extracted by numerical integrating the band-to-band tunneling generation rate over the volume of the device. It is shown that the potential distributions, the electric field profile, and the tunneling current predicted by the analytical model are in close agreement with the 3D device simulation results without the need of fitting parameters. Additionally, the dependence of the tunneling current on the device parameters in terms of the gate oxide thickness, gate dielectric constant, channel length, and applied drain bias is investigated and also demonstrated its agreement with the device simulations.

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“…Table 2 shows capacitances and transconductances extracted by radio-frequency gate-allaround TFETs modeling in the different Q-points [35]. These capacitances of each device are extracted for further analyzing into high frequency response.…”

Section: Circuit Performancesmentioning

confidence: 99%

Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation

Roh¹,

Seo²,

Yoon³

et al. 2014

Journal of Electrical Engineering and Technology

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-In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at V DS = 1 V, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain (A v ), unit-gain frequency (f unity ), and cut-off frequency (f T ). The Ge/GaAs HGD pnpn TFET demonstrated A v = 19.4 dB, f unity = 10 THz, f T = 0.487 THz and f max = 18THz.

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Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors

Cited by 90 publications

References 29 publications

Device and Circuit Level Performance Comparison of Tunnel FET Architectures and Impact of Heterogeneous Gate Dielectric

Device and Circuit Level Performance Comparison of Tunnel FET Architectures and Impact of Heterogeneous Gate Dielectric

A 3D analytical modeling of tri-gate tunneling field-effect transistors

Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation

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