Analysis and Compact Modeling of Gate Capacitance in Organic Thin-Film Transistors

Cortes-Ordonez, H.; Jacob, S.; Mohamed, Firas; Ghibaudo, G.; Iñı́guez, Benjamı́n

doi:10.1109/ted.2019.2906827

Cited by 8 publications

(11 citation statements)

References 21 publications

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“…On the other hand, non-quasi static effects need to be incorporated into the compact model for higher frequency circuit simulation [133]. However, more physical effects need to be accounted for higher frequencies.…”

Section: Current and Future Challengesmentioning

confidence: 99%

The 2021 flexible and printed electronics roadmap

Bonnassieux¹,

Brabec²,

Cao³

et al. 2021

Flex. Print. Electron.

132

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Section: Current and Future Challengesmentioning

confidence: 99%

The 2021 flexible and printed electronics roadmap

Bonnassieux¹,

Brabec²,

Cao³

et al. 2021

Flex. Print. Electron.

132

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show abstract

“…The first aim of recent AC model for OFETs has been to encompass all operation regimes [37], [44]. The second aim was to describe the frequency dependence of -characteristics [45] and experimental validation of such behavior [46].…”

Section: Summary Of Recent Ac Modelsmentioning

confidence: 99%

“…By putting (53) into (52), the authors formulated the frequency-dependent capacitance. In [46], the transition between the subthreshold and the above threshold regime was smoothened by a continuous interpolation function as an effective gate voltage overdrive.…”

Section: Approach Based On Castro-carranza Et Al [45]mentioning

confidence: 99%

“…This model is shown valid for typical OFETs upto 10 kHz. At high frequencies, non-quasi-static effects are significant [46]. These effects are experimentally observed in the first derivative of versus plot, which manifest in a more complex manner in accumulation regime compared to the depletion regime [ Fig.…”

Section: Approach Based On Castro-carranza Et Al [45]mentioning

confidence: 99%

“…Comparison between the measured (symbols) first derivative of versus and the model (solid lines) by Castro-Carranza et al[45] at (a) 500 Hz and (b) 10 kHz. Reproduced from[46].…”

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confidence: 99%

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Advances in Compact Modeling of Organic Field-Effect Transistors

Jung

Bonnassieux

Horowitz

et al. 2020

IEEE J. Electron Devices Soc.

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In this review, recent advances in compact modeling of organic field-effect transistors (OFETs) are presented. Despite the inherent strength for printed flexible electronics and the extremely aggressive research conducted over more than three decades, the OFET technology still seems to remain at a relatively low technological readiness level. Among various possible reasons for that, the lack of a standard compact model, which effectively bridges the device-and system-level development, is clearly one of the most critical issues. This paper broadly discusses the essential requirements, up-to-date progresses, and imminent challenges for the OFET compact device modeling toward a universal, physically valid, and applicable description of this fast-developing technology.

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Organic transistor‐based integrated circuits for future smart life

Xie,

Ding,

Jin

et al. 2024

SmartMat

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With the rapid development of advanced technologies in the Internet of Things era, higher requirements are needed for next‐generation electronic devices. Fortunately, organic thin film transistors (OTFTs) provide an effective solution for electronic skin and flexible wearable devices due to their intrinsic features of mechanical flexibility, lightweight, simple fabrication process, and good biocompatibility. So far considerable efforts have been devoted to this research field. This article reviews recent advances in various promising and state‐of‐the‐art OTFTs as well as related integrated circuits with the main focuses on: (I) material categories of high‐mobility organic semiconductors for both individual transistors and integrated circuits; (II) effective device architectures and processing techniques for large‐area fabrication; (III) important performance metrics of organic integrated circuits and realization of digital and analog devices for future smart life; (IV) applicable analytical models and design flow to accelerate the circuit design. In addition, the emerging challenges of OTFT‐based integrated circuits, such as transistor uniformity and stability are also discussed, and the possible methods to solve these problems at both transistor and circuit levels are summarized.

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Analysis and Compact Modeling of Gate Capacitance in Organic Thin-Film Transistors

Cited by 8 publications

References 21 publications

The 2021 flexible and printed electronics roadmap

The 2021 flexible and printed electronics roadmap

Advances in Compact Modeling of Organic Field-Effect Transistors

Organic transistor‐based integrated circuits for future smart life

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