Analysis and Design of Class-E$_{3}$F and Transmission-Line Class-E$_{3}$F$_{2}$ Power Amplifiers

Thian, Mury; Fusco, Vincent

doi:10.1109/tcsi.2010.2090571

Cited by 31 publications

(16 citation statements)

References 19 publications

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“…The Class-EF PA introduced in [9]- [10] takes advantage of soft-switching operation offered by the Class E and low peak switch voltage of the Class F i.e. 2×VDC.…”

Section: Introductionmentioning

confidence: 99%

A High-Efficiency GaN Doherty Power Amplifier With Blended Class-EF Mode and Load-Pull Technique

Barakat

Thian

Fusco

2018

IEEE Trans. Circuits Syst. II

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“…The Class-EF PA introduced in [9]- [10] takes advantage of soft-switching operation offered by the Class E and low peak switch voltage of the Class F i.e. 2×VDC.…”

Section: Introductionmentioning

confidence: 99%

A High-Efficiency GaN Doherty Power Amplifier With Blended Class-EF Mode and Load-Pull Technique

Barakat

Thian

Fusco

2018

IEEE Trans. Circuits Syst. II

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“…The analysis in [14] presented a design methodology for Class-E PA wherein the nonlinear output capacitance can be adequately approximated with an equivalent linear capacitance. The Class-EF PA and its variants reported in [15]- [20] offer a low peak switch voltage of only 2V DC as in the Class F as well as soft-switching operation as in the Class E, Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

“…As a consequence, the open-circuit requirement at odd harmonics for optimum Class-EF operation would be violated. The theoretical analysis in [20] demonstrates that the f MAX of the Class-EF PA can be increased by reducing the duty ratio, by switching the transistor ON for a shorter period. However, this strategy results in low power-output capability and low load resistance.…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency Harmonic-Peaking Class-EF Power Amplifiers With Enhanced Maximum Operating Frequency

Thian

Barakat

Fusco

2015

IEEE Trans. Microwave Theory Techn.

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The recently introduced Class-EF power amplifier (PA) has a peak switch voltage lower than that of Class-E PA. However, the value of the transistor output capacitance at high frequencies is typically larger than the required Class-EF optimum shunt capacitance. Consequently, soft-switching operation that minimizes power dissipation during OFF-to-ON transition cannot be achieved at high frequencies. Two new Class-EF PA variants with transmission-line load networks, namely, third-harmonic-peaking (THP) and fifth-harmonicpeaking (FHP) Class-EF PAs are proposed in this paper. These permit operation at higher frequencies at no expense to other PA figures of merit. Analytical expressions are derived in order to obtain circuit component values which satisfy the required Class-EF impedances at fundamental frequency, all even harmonics, and the first few odd harmonics as well as simultaneously providing impedance matching to a 50 Ω load. Furthermore, a novel open-circuit and shorted stub arrangement which has substantial practical benefits is proposed to replace the normal quarter-wave line connected at the transistor's drain. Using GaN HEMTs, two PA prototypes were built. Measured peak drain efficiency of 91% and output power of 39.5 dBm were obtained at 2.22 GHz for the THP Class-EF PA. The FHP Class-EF PA delivered output power of 41.9 dBm with 85% drain efficiency at 1.52 GHz.

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“…The output matching network is designed to provide an open circuit to the third harmonic and simultaneously match the 50 Ω output resistance to the desired load. The Class-E3F2 PA was previously analyzed in [4] with a design being implemented using transmission lines. Here, a new Class-E3F2 topology suitable for lumped component realizations is proposed.…”

mentioning

confidence: 99%

“…The Class-EF naming convention is as follows: the subscript to the E describes the harmonics open-circuited at the load while the subscript to the F describes the harmonics shorted at the load. Therefore, in a Class-E3F2 amplifier, an open and short circuit are presented to the drain node of the transistor at 3f0 and 2f0, respectively [4].…”

mentioning

confidence: 99%

A 5-GHz Class-E3F2 power amplifier with 51% PAE and 21-dBm output power on 65nm CMOS

Love

Thian

Grebennikov³

2017

2017 IEEE 18th Wireless and Microwave Technology Conference (WAMICON)

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Abstract-The design and simulation of a Class-E3F2 power amplifier using 65nm CMOS technology are detailed in this paper. The Class-EF amplifier combines aspects of the Class-E and -F load networks such as the harmonic terminations from the Class F and the use of a shunt capacitance at the drain in the Class E. A mixed-voltage cascode topology is used for the output stage to enable the use of fast low-voltage transistors with a higher supply voltage. To satisfy the Class-EF conditions the load network is designed to provide a short and open circuit to the second and third harmonic signals, respectively. The driver stage utilizes an Inverse Class-B topology to deliver a half-wave rectified sine to the output stage. The simulated amplifier achieved a power-added efficiency of 51% and a gain of 26 dB at an output power of 21 dBm. The second and third harmonic components were attenuated to -47.6 dBc and -79.3 dBc, respectively.

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Analysis and Design of Class-E$_{3}$F and Transmission-Line Class-E$_{3}$F$_{2}$ Power Amplifiers

Cited by 31 publications

References 19 publications

A High-Efficiency GaN Doherty Power Amplifier With Blended Class-EF Mode and Load-Pull Technique

A High-Efficiency GaN Doherty Power Amplifier With Blended Class-EF Mode and Load-Pull Technique

High-Efficiency Harmonic-Peaking Class-EF Power Amplifiers With Enhanced Maximum Operating Frequency

A 5-GHz Class-E3F2 power amplifier with 51% PAE and 21-dBm output power on 65nm CMOS

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