Analysis and optimal design of surface radiation hard p<sup>+</sup>n Si pixel detector: impact on signal collection using TCAD simulation

Saini, Nitu; Patyal, Shilpa; Kaur, B.; Srivastava, A. K.

doi:10.1080/10420150.2022.2098746

Cited by 1 publication

(2 citation statements)

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“…The novel design option with optimized detector performance like high breakdown voltage (Vbd) and CCE is reported in [4,10]. It has been found that using the design parameter shown in table 2 the Vbd of 750 V and high CCE is achieved for the synchrotron application.…”

Section: Optimized Guard Ring Layout Of Silicon P+n Pixel Detector De...mentioning

confidence: 99%

“…Here, based on the detector specification for experiments like Eu-XFEL and our simulation studies, the outer pixel guard ring layout having the dead edge of 620 µm with intra guard ring (IGR) and wide guard ring (WGR) technology near to the cut edge is proposed to achieve the Vbd> 1000 V and high CCE as discussed [10] and the schematic of layout design and its parameter is shown in figure 5 and table 2. As expected from the previous analysis, the Vfd for 10 MGy irradiated detector will be around 137 V with 20% uncertainty for Nd of 1 x 10 12 cm -3 .…”

Section: Optimized Guard Ring Layout Of Silicon P+n Pixel Detector De...mentioning

confidence: 99%

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TCAD Simulation of X-ray irradiated Si microstrip detector : Impact on full depletion voltage and leakage current

Saini,

Srivastava

2023

J. Phys.: Conf. Ser.

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In the intense x-ray radiation environment at synchrotron sources, it is reported that the performance of the silicon pixel detectors degrades with an increasing x-ray dose up to 10 MGy. To study the impact of x-ray irradiation effects in the n-Fz Si microstrip detector, the microscopic radiation damage parameters of x-ray radiation were extracted from the current–voltage, and capacitance-voltage experiments on test Si microstrip detector. The damage parameters are implemented in Synopsys TCAD. In this paper, we have irradiated the test structure up to 10 MGy, and the results on full depletion voltage, and leakage current are compared with the TCAD simulation results. A very good agreement in between experimental and simulation results is observed in the leakage current for the non-irradiated, and 1 MGy irradiated detectors, where for high doses up to 10 MGy, experimental leakage current was fifty times higher than the simulated leakage current at full depletion voltage. The full depletion voltage in 0 MGy detector is also well matched with the simulation result, and further, it shows the full depletion voltage performance of x-ray irradiated detector. Finally, the new detector design specifications and process parameters are proposed for the optimum performance of the radiation hard p+n Si pixel detector equipped with guard rigs at cut edge for the next generation photon science applications.

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Section: Optimized Guard Ring Layout Of Silicon P+n Pixel Detector De...mentioning

confidence: 99%

Section: Optimized Guard Ring Layout Of Silicon P+n Pixel Detector De...mentioning

confidence: 99%

TCAD Simulation of X-ray irradiated Si microstrip detector : Impact on full depletion voltage and leakage current

Saini,

Srivastava

2023

J. Phys.: Conf. Ser.

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Analysis and optimal design of surface radiation hard p⁺n Si pixel detector: impact on signal collection using TCAD simulation

Cited by 1 publication

References 13 publications

TCAD Simulation of X-ray irradiated Si microstrip detector : Impact on full depletion voltage and leakage current

TCAD Simulation of X-ray irradiated Si microstrip detector : Impact on full depletion voltage and leakage current

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Analysis and optimal design of surface radiation hard p+n Si pixel detector: impact on signal collection using TCAD simulation

Cited by 1 publication

References 13 publications

TCAD Simulation of X-ray irradiated Si microstrip detector : Impact on full depletion voltage and leakage current

TCAD Simulation of X-ray irradiated Si microstrip detector : Impact on full depletion voltage and leakage current

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Analysis and optimal design of surface radiation hard p⁺n Si pixel detector: impact on signal collection using TCAD simulation