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A lot of R&D work is carried out in the CERN RD 50 collaboration to find out the best material for the Si detectors that can be used in the harsh radiation environment of HL-LHC, n and p-MCz Si was identified as one of the prime candidates as a material for strip detector that can be chosen for the phase 2 upgrade plan of the new Compact Muon Solenoid Tracker detector in 2026. In this work, four level deep-trap mixed irradiation model for p-MCz Si is proposed by the comparison of experimental data on the full depletion voltage and leakage current to the Shockley Read Hall recombination statistics results on the mixed irradiated p-MCz Si PAD detector. The effective introduction rate (η eff) of shallower donor deep trap E30K is extracted using SRH theory calculations for experimental N eff and that can show the behavior of space charges and electric field distribution in the p-MCz Si strip detector and compared its value with the η eff of shallower donor deep trap E30K in the nMCz Si microstrip detector. Prediction uncertainty in the p-MCz Si radiation damage mixed irradiation model is considered in the full depletion voltage and leakage current. A very good agreement is observed in the experimental and SRH results. This radiation damage model is also used to extrapolate the value of the full depletion voltage at different mixed (proton + neutron) higher irradiation fluences for the thin p-MCz Si microstrip detector.

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The R3B collaboration aims to assemble an experimental setup with high resolution and efficiency to perform kinematically complete measurements of reactions with high-energy RIBs (radioactive ion beams). In the R3B experimental setup, the silicon tracker is positioned closest to the target region and can provide high-resolution position measurements of light-charged particles like protons. The three layers of the silicon tracker are constructed with a total of 30 Si double-sidedstrip detectors (DSSD). In this paper, as an option of 23 MeV proton irradiated n-type Float-Zone(Fz)Si double-sidedstrip detector (DSSD) havebeen considered, and by taking the two-trapproton irradiation damage model, the bulk damage effect and the macroscopic performance of the Sidouble-sidedstrip detector (DSSD) have been discussed. The detector is irradiated with three values of proton fluences (equivalent to 1Mev neutron fluence): 2×1014,5×1014 and 8×1014 cm-2. By using the Shockley-Read-Hall recombination (SRH) formulation, the full depletion voltage and leakage current have been measured as a function of the irradiation dose, finally the device and process parameters and specifications for the Si double-sidedstrip detector (DSSD) used in the R3B silicon tracker experimenthavebeen proposed.

A radiation hard Si detector is used in the new CMS tracker detector at HL-LHC. It has been observed that n-MCz and n-Fz Si as a material can be used for the Si micro strip detector. The detector design for this material should be simulated and optimized to get high CCE. In order to understand the charge collection behavior of the n-MCz/n-FzSi detector, it is required to simulate and compare the radiation damage effects in the mixed irradiated n-MCz Si and proton irradiated n-Fz Si micro strip detector equipped with metal overhang and multiple guard rings. In this paper, we have done analysis and optimization of the radiation hard n-MCz Si/n-Fz Si strip detector design for the HL-LHC experiment in order to get high CCE.