Analysis and Simulation of Interface Quality and Defect Induced Variability in MgO Spin-Transfer Torque Magnetic RAMs

Sikder, Bejoy; Lim, J. H.; Kumar, Mondol Anik; Padovani, Andrea; Haverty, Michael; Kamal, Uday; Raghavan, Nagarajan; Larcher, Luca; Pey, K. L.; Baten, Zunaid

doi:10.1109/led.2020.3040131

Cited by 6 publications

(2 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The higher value of α bipolar ∼2.7, compared to α positive ∼0.1 and α negative ∼0.3, agrees with higher β bipolar . Another noteworthy trend is the consistently increasing β with stress voltage and T , again due to an enhancement in α caused by higher trap-assisted tunneling current [21] and thermal stress in the dielectric.…”

Section: F Weibull Slope Comparison For Different Stress Modesmentioning

confidence: 92%

“…Noman et al [32] reported electron trapping-induced filament formation in TiO 2 -based resistive devices contributing to percolation path formation. With the large applied current density in our MgO devices, electron trapping could take place at preexisting oxygen vacancies, the presence of boron oxide or lattice mismatches at the CoFeB-MgO interface [4], [21] that can lead to strong localized fields. The trapped electrons result in greater current flow in the local region, which further induces more electron trapping.…”

Section: G Non-arrhenius Trend Of Mgo Breakdownmentioning

confidence: 99%

See 1 more Smart Citation

Impact of Voltage Polarity on Time-Dependent Dielectric Breakdown of 1-nm MgO-Based STT-MRAM With Self-Heating Correction

Tan

Lim

Sikder

et al. 2023

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Time-dependent dielectric breakdown (TDDB) lifetime of ultrathin (1 nm) MgO in spin-transfer torque magnetoresistive random access memory (STT-MRAM) devices has recently been shown to be driven by factors other than voltage alone. This study focuses on the specific role of asymmetry in the current flow for different polarity pulsing modes of voltage stress on the TDDB lifetime of 1-nm MgO. Numerical analysis, based on a 3-D heat-diffusion equation and spintronic simulations, has been performed to characterize the temperature rise in the devices for precise correction of self-heating to obtain a correct interpretation of MgO TDDB. It is shown that the different lifetimes for the positive and negative modes can be attributed to different temperature increases arising from self-heating. While the positive and negative modes displayed a non-Arrhenius behavior, the bipolar mode showed an Arrhenius trend in which we observed a unique bimodal behavior of TDDB activation energy (E a ) as a function of stress voltage in the ultrathin MgO stack. We discuss the role of additional driving forces, such as current, self-heating, charge trapping, and interface strain governing the breakdown mechanism along with the voltage effect.

show abstract

Section: F Weibull Slope Comparison For Different Stress Modesmentioning

confidence: 92%

Section: G Non-arrhenius Trend Of Mgo Breakdownmentioning

confidence: 99%

Impact of Voltage Polarity on Time-Dependent Dielectric Breakdown of 1-nm MgO-Based STT-MRAM With Self-Heating Correction

Tan

Lim

Sikder

et al. 2023

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

Effect of Ferromagnet/Organic Semiconductor Interface Defect States on Tunnel Magnetoresistance of Hybrid Magnetic Tunnel Junctions

Sujatha,

Pahuja,

Deb

2024

Physica Status Solidi (b)

View full text Add to dashboard Cite

Herein, analytical modeling of Fe3O4/x(≈1.1 nm)/Co (x = rubrene, C60, and bathocuproine (BCP)) magnetic tunnel junctions (MTJs) has been performed using rubrene, C60, and BCP as organic spacer layers. The simulation is considered as nonequilibrium Green's function assuming spin precession at ferromagnet/organic semiconductor (FM/OSC) interface defect states. The voltage‐dependent resistances for both parallel (RP) and antiparallel (RAP) orientations have been observed to be dependent on spin injection from FM/OSC defect states. Pinning well‐dependent defect state depths have been associated with band misalignment‐induced lattice distortion at FM/OSC interface of the devices. The large tunnel magnetoresistance (TMR) response for rubrene‐based MTJ device has been attributed to a higher change of FM/OSC defect state depths with voltage. High TMR may have reduced spin torque‐dependent spin precession, leading to lower spin transfer torque for the rubrene device. Hence, engineering of defect states at the FM/OSC interface may lead to the successful realization of enhanced TMR in organic spacer MTJs for high‐performance spintronic memory applications.

show abstract

A Multi-dimensional Health Index Calculation Algorithm for ZPW-2000A Track Circuit

et al. 2022

Proceedings of the 5th International Conference on Electrical Engineering and Information Technologies for Rail Transportation

View full text Add to dashboard Cite

Analysis and Simulation of Interface Quality and Defect Induced Variability in MgO Spin-Transfer Torque Magnetic RAMs

Cited by 6 publications

References 32 publications

Impact of Voltage Polarity on Time-Dependent Dielectric Breakdown of 1-nm MgO-Based STT-MRAM With Self-Heating Correction

Impact of Voltage Polarity on Time-Dependent Dielectric Breakdown of 1-nm MgO-Based STT-MRAM With Self-Heating Correction

Effect of Ferromagnet/Organic Semiconductor Interface Defect States on Tunnel Magnetoresistance of Hybrid Magnetic Tunnel Junctions

A Multi-dimensional Health Index Calculation Algorithm for ZPW-2000A Track Circuit

Contact Info

Product

Resources

About