Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs

Liang, Qi; Krithivasan, R.; Ahmed, Amr; Lei, Yuan; Liu, Ying; Cressler, John D.; Niu, Guofu; Rieh, Jae Sung; Freeman, G.; Ahlgren, D.; Joseph, A.J.

doi:10.1016/j.sse.2006.04.027

Cited by 12 publications

(1 citation statement)

References 18 publications

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“…However, conventional low-cost Si-based devices with poor frequency and power response have been extensively studied to push both cutoff frequency and maximum oscillation frequency over 200 GHz [4]. Moreover, bandgap engineering with SiGe strained layers offers an additional bonus for the operation of SiGe HBTs at reduced temperatures (e.g., at liquid-nitrogen temperature = 77.3 K), and hence SiGe offers much wider operating temperature range [5]. Consequently a, precise modeling of this effects is necessary.…”

Section: Introductionmentioning

confidence: 99%

Static Performance of SiGe HBTs at Low Temperature

Lakhdara¹,

Latreche²,

Gontrand

2014

AMM

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—This paper analyse is the impact of cryogenic temperatures for SiGe Heterojunction Bipolar Transistors (HBTs) base, realised in BiCMOS9 0.13μm industrial process. The use of these components in microwaves applications exposed to various temperatures is fundamental aspect to predict in precise way its electric characteristics. This paper investigates the temperature dependence from (170 K to 300 K) of DC, for NPN SiGe heterojunction bipolar transistors (HBTs) and notably modeling high performance Si/SiGe HBT for telecommunication and radar detection (>0.5THz) in low temperature (cryogenic temperature).

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Section: Introductionmentioning

confidence: 99%