Analysis of a micro pressure-sensor employing SiC-AlN-SiC structure

Lv, Haojie; Lai, Kaiyuan; Qi, Yonglan

doi:10.1080/14484846.2019.1704490

Cited by 2 publications

(1 citation statement)

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“…However, piezoelectric sensors lack enough advantages in miniaturization and cost (because extra precise charge amplification is needed) for scale application. Capacitive pressure sensors have high resolution and low thermal sensitivity drift [ 11 , 12 ] and can also be miniaturized at low cost. For example, Chen Li reported a split-type pressure sensor based on differential capability with a working temperature range of 25–400 °C and a sensitivity of 9.27 mV/kPa [ 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test

Zhao

Wang

et al. 2023

Micromachines

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Due to material plastic deformation and current leakage at high temperatures, SOI (silicon-on-insulator) and SOS (silicon-on-sapphire) pressure sensors have difficulty working over 500 °C. Silicon carbide (SiC) is a promising sensor material to solve this problem because of its stable mechanical and electrical properties at high temperatures. However, SiC is difficult to process which hinders its application as a high-temperature pressure sensor. This study proposes a piezoresistive SiC pressure sensor fabrication method to overcome the difficulties in SiC processing, especially deep etching. The sensor was processed by a combination of ICP (inductive coupled plasma) dry etching, high-temperature rapid annealing and femtosecond laser deep etching. Static and dynamic calibration tests show that the accuracy error of the fabricated sensor can reach 0.33%FS, and the dynamic signal response time is 1.2 μs. High and low temperature test results show that the developed sensor is able to work at temperatures from −50 °C to 600 °C, which demonstrates the feasibility of the proposed sensor fabrication method.

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