Analysis of a New 15-kV SiC n-GTO under Pulsed Power Applications

Kim, M.; Tsoi, Tsz; Forbes, J.; Bilbao, Argenis; Lacouture, Shelby; Bayne, Stephen; O'Brien, Heather; Ogunniyi, Aderinto; Ryu, Sei‐Hyung

doi:10.1109/ppps34859.2019.9009743

Cited by 7 publications

(1 citation statement)

References 2 publications

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“…In recent years, the need to develop high-voltage and high-power switching devices has grown rapidly. It is believed that semiconductor devices made of wide bandgap materials such as Silicon Carbide (SiC) will replace conventional silicon (Si) power devices in high voltage power systems due to their high critical electrical field and thermal conductivity [1].…”

Section: Introductionmentioning

confidence: 99%

The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor

Cao

Gammon

Renz

et al. 2022

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

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A 15kV SiC thyristor is analysed, considering for the first time the design properties that will ensure the safe, stable operation of the device as an integrated gate commutated thyristor (IGCT), while also minimizing its onstate losses. Key to the optimization is ensuring that, during the turn-off phase, minority carrier charge is commutated via the base to the gate, rather than flowing into the cathode, thus reducing large switching losses, and an unstable transition period. This is made possible in the design presented via the introduction of a highly doped base strip (HDBS), which provides a low resistance channel between the centre of the cathode and the gate. This innovation allows the cathode to be extended, such that it makes up 90% of the top surface, thus minimising on-state losses.

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Section: Introductionmentioning

confidence: 99%