Abstract:The main objective of this research is to fabricate double-layer hydrogenated amorphous silicon (a-Si:H) using a PECVD by varying the thickness of the active layer. To obtain the thickness of the double active layer, dilution of silane plasma is carried out by hydrogen, with a ratio of hydrogen and silane, R=H2/SiH4 varies, and the deposition time of the active layer, while the n-type and n-type extrinsic layers are fixed for each -each sample. Then on the sample, there is a metal coating on the back which act… Show more
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