Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications

Fletcher, A.S. Augustine; Nirmal, D.; Ajayan, J.; Arivazhagan, L.

doi:10.1016/j.aeue.2018.12.006

Cited by 73 publications

(17 citation statements)

References 19 publications

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“…Recently, researchers have shown immense interest in nitride semiconductors for application in high-power and emitting devices, considering that the use of GaN-based semiconductors has met great success in industry. − However, the Al x Ga y In 1– x – y N semiconductor system presents several limitations, including the high cost of the elements, particularly indium, the segregation of indium in the devices, and a weak green-light emission intensity. − …”

Section: Introductionmentioning

confidence: 99%

Synthesis of CaSnN₂ via a High-Pressure Metathesis Reaction and the Properties of II-Sn-N₂ (II = Ca, Mg, Zn) Semiconductors

et al. 2021

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A novel ternary nitride semiconductor, CaSnN2, with a layered rock-salt-type structure (R3̅m) was synthesized via a high-pressure metathesis reaction. The properties and structures of II-Sn-N2 (II = Ca, Mg, Zn) semiconductors were also systematically studied, and the differences among them were revealed by comparison. These semiconductor materials showed a rock-salt- or wurtzite-type structure depending on the combined effect of the synthetic conditions and the characteristics of the group II elements. Additionally, the rock-salt-type structures of CaSnN2 and MgSnN2 (i.e., the ambient-pressure phase) were different from those predicted using first-principles calculations. Further, on the basis of first-principles calculations and consideration of the pressure effect, the recovered CaSnN2 sample showed an R3̅m structure. CaSnN2 and MgSnN2 showed a band gap of 2.3–2.4 eV, which is suitable for overcoming the green-light-gap problem. These semiconductors also showed a strong cathode luminescence peak at room temperature, and generalized gradient approximation (GGA) calculations revealed that CaSnN2 has a direct band gap. These inexpensive and nontoxic semiconductors (II-Sn-N2 semiconductors (II = Ca, Mg, Zn)), with mid band gaps are required as pigments to replace cadmium-based materials. They can also be used in emitting devices and as photovoltaic absorbers, replacing In x Ga1–x N semiconductors.

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Section: Introductionmentioning

confidence: 99%

Synthesis of CaSnN₂ via a High-Pressure Metathesis Reaction and the Properties of II-Sn-N₂ (II = Ca, Mg, Zn) Semiconductors

et al. 2021

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“…Figure10shows the comparison of J-FOM (= fT × BVgd) as a function of the gate length for various GaN-based HEMTs[20,21,[29][30][31][32][33][34][35][36][37][38][39][40][41][42][43]. The MIS-HEMTs that were fabricated in this study exhibited the J-FOM in the range between 5.57 and 10.67 THz•V, which are the state-of-the-art values reported for GaN-based HEMTs.…”

mentioning

confidence: 70%

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

et al. 2020

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This study investigated the effects of a thin aluminum oxynitride (AlOxNy) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain currents in comparison with the conventional Schottky-gate HEMTs, thus enhancing the breakdown voltage. The effects of gate recess were also investigated while using recessed MIS-HEMT configuration. The Johnson’s figures of merit (= fT × BVgd) for the fabricated MIS-HEMTs were found to be in the range of 5.57 to 10.76 THz·V, which is the state-of-the-art values for GaN-based HEMTs without a field plate. Various characterization methods were used to investigate the quality of the MIS and the recessed MIS interface.

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“…As a result, it supplies C GS and C GD , where C GS is known by gate to source capacitance, and C GD is defined by gate to drain capacitance 47 . The parasitic capacitance under the gate terminal is kept to a minimum due to its lower size and smaller field plate area 48 45,49 .…”

Section: Resultsmentioning

confidence: 99%

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

Rao

Singh²,

Lenka

et al. 2022

Int J RF Mic Comp-Aid Eng

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In this piece of work, a recessed gate field-plated AlGaN/AlN/GaN HEMT on β-Ga 2 O 3 substrate is proposed and its performance characteristics are compared with HEMT structure employing a recessed gate (depth of 25, 30 and 35 nm) without field-plate. The device is simulated to obtain breakdown voltage, microwave frequency characteristics (f T , f max ) and JFOM using Atlas TCAD. The cut-off frequency and maximum frequency of oscillations are 420 and 720 GHz, respectively, which are excellent than those reported in recent studies. For 20 nm gate length, the suggested HEMT achieves the maximum JFOM of 45.3 THz-V. These f T , f max and JFOM demonstrate that the proposed HEMT on β-Ga 2 O 3 substrate is an excellent candidate for emerging microwave and millimetre wave applications.

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Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications

Cited by 73 publications

References 19 publications

Synthesis of CaSnN₂ via a High-Pressure Metathesis Reaction and the Properties of II-Sn-N₂ (II = Ca, Mg, Zn) Semiconductors

Synthesis of CaSnN₂ via a High-Pressure Metathesis Reaction and the Properties of II-Sn-N₂ (II = Ca, Mg, Zn) Semiconductors

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

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Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications

Cited by 73 publications

References 19 publications

Synthesis of CaSnN2 via a High-Pressure Metathesis Reaction and the Properties of II-Sn-N2 (II = Ca, Mg, Zn) Semiconductors

Synthesis of CaSnN2 via a High-Pressure Metathesis Reaction and the Properties of II-Sn-N2 (II = Ca, Mg, Zn) Semiconductors

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Simulation modelling of III‐Nitride / β ‐Ga 2 O 3 Nano‐HEMT for microwave and millimetre wave applications

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Synthesis of CaSnN₂ via a High-Pressure Metathesis Reaction and the Properties of II-Sn-N₂ (II = Ca, Mg, Zn) Semiconductors

Synthesis of CaSnN₂ via a High-Pressure Metathesis Reaction and the Properties of II-Sn-N₂ (II = Ca, Mg, Zn) Semiconductors

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications