2020
DOI: 10.1109/ted.2020.2968757
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Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs

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Cited by 28 publications
(18 citation statements)
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“…Based on the optimized growth temperature, pressure, V/III ratio and buffer structures, Wakejima's group achieved the total thickness of 8 µm for the AlGaN/GaN HEMT epi‐structure on 6” Si substrate. [ 73 ] The normal thicknesses of GaN‐based HEMT ranges from 2 to 6 µm with the vertical breakdown field strengths of 1.5–2.72 MV cm ‐2 , which can be realized via a series of buffer design works [ 74–78 ] and approach the theoretical limit of GaN (3 MV cm ‐1 ). However, both the increasing thickness and lowering treading dislocations hardly contribute to the enhancement of the lateral V BD of GaN HEMTs.…”
Section: Modified Buffer Structuresmentioning
confidence: 99%
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“…Based on the optimized growth temperature, pressure, V/III ratio and buffer structures, Wakejima's group achieved the total thickness of 8 µm for the AlGaN/GaN HEMT epi‐structure on 6” Si substrate. [ 73 ] The normal thicknesses of GaN‐based HEMT ranges from 2 to 6 µm with the vertical breakdown field strengths of 1.5–2.72 MV cm ‐2 , which can be realized via a series of buffer design works [ 74–78 ] and approach the theoretical limit of GaN (3 MV cm ‐1 ). However, both the increasing thickness and lowering treading dislocations hardly contribute to the enhancement of the lateral V BD of GaN HEMTs.…”
Section: Modified Buffer Structuresmentioning
confidence: 99%
“…[ 86 ] The combination of SLs and doping in the buffer structure can both enhance the vertical and lateral V BD in the GaN HEMTs. [ 77 ]…”
Section: Modified Buffer Structuresmentioning
confidence: 99%
“…On the other hand, a buffer layer has to be designed to release stress and make the surface flat. Typical structures include a graded AlGaN buffer [ 55 ], a GaN/AlGaN superlattice buffer [ 56 ], low-T GaN, or low-T GaN with an AlN insertion [ 57 ]. For the growth of GaN on Si substrates, AlN nucleation and a buffer layer have to be grown to avoid interaction between Ga and Si at high growth temperatures.…”
Section: Conventional Gan Hemt Technologymentioning
confidence: 99%
“…Growth of GaN/AlN SLs on silicon substrates over AlGaN and AlN interlayers was demonstrated in the studies by Egawa and coworkers, [36,37] using as capping layers for the reduction of resistance in GaN HEMTs, [38] and then optimized for high-quality crack-free buffer layer structures, [39][40][41][42] increased breakdown voltage, [35,43] and switching and high-frequency transistors. [44,45] SL buffers enabled the reduction of on-resistance and trapping effects in GaN heterostructures for applications from 600 V up to 1.2 kV [14,46] and were combined with other advanced isolation techniques such as silicon-on-insulator. [47] SLs as engineered layers [48] are also used in other applications such as for optical devices.…”
Section: Approach and Outlinementioning
confidence: 99%