Analysis of Anomalously Large Junction Leakage Current of Nickel Silicided N-Type Diffused Layer and Its Improvement

Ohguro, T.; Morimoto, T.; Ushiku, Y.; Iwai, Hiroki

doi:10.7567/ssdm.1993.s-ii-18

Cited by 18 publications

(23 citation statements)

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“…In this reaction, we have assumed TDMAS adsorbs on the surface to consume two sites. If we assume the single site adsorption, the coverage and exposure L are expressed with Langmuire equation as shown, ), exp( kL 1 [2] where k is a reaction constant. If the number of adsorption site is two, the equation can be modified as [10] ,…”

Section: Resultsmentioning

confidence: 99%

Atomic-Layer-Deposition of SiO2 with Tris(Dimethylamino)Silane (TDMAS) and Ozone Investigated by Infrared Absorption Spectroscopy

et al. 2008

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We have studied SiO 2 ALD processes with precursors of tris(dimethylamino)silane (TDMAS) and ozone on Si(100) surfaces at room temperature by infrared absorption spectroscopy with a multiple internal reflection geometry. It was found that TDMAS dissociatively adsorbs on OH sites of hydroxyrated Si surfaces and ozone irradiation is effective to remove the hydroaminocarbon adsorbates introduced in the course of the TDMAS adsorption. Compensation of OH sites by a water vapor treatment after the ozone process is effective to sustain the cyclic SiO 2 deposition.

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Section: Resultsmentioning

confidence: 99%

Atomic-Layer-Deposition of SiO2 with Tris(Dimethylamino)Silane (TDMAS) and Ozone Investigated by Infrared Absorption Spectroscopy

et al. 2008

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“…Hence, it is clear that Ti-cap layer serves as an oxygen scavenger. According to the report of T. Ohguro et al [4], [5], anomalously large Ni silicide junction leakage current is due to a very rough interface between the silicide layer and the silicon substrate caused by oxidation of the NiSi film during the thermal process. The oxygen plays the role as one kind of contaminant in the silicidation process and degrades the quality of Ni-silicide films.…”

Section: Resultsmentioning

confidence: 99%

“…However, the problems encountered in the NiSi silicidation process are anomalously large junction leakage current and sheet resistance degradation. Recently, using TiN cap [4] and nitrogen-doped [5] techniques have been reported to reduce junction leakage current. The improvement was found due to the formation of nitride layer, which prevents oxidation of silicide/silicon interface and suppresses interface roughness to a certain degree.…”

Section: Introductionmentioning

confidence: 99%

Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

Hou

Lei

Chao

1999

IEEE Electron Device Lett.

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“…Among various means of such thermal stabilization (such as interlayer formation with Ir and Co, N doping into Ni, or pre-silicide implantation with F, N, or BF 2 immediately prior to silicidation), [3][4][5][6][7] Pt addition is currently attracting increasing attention as an efficient method of improving the physical integrity of NiSi. In fact, its resilience against thermal stress in terms of its unchanged sheet resistance and increased NiSi 2 formation temperature is abundantly documented.…”

Section: Introductionmentioning

confidence: 99%

Leakage Reduction by Thermal Annealing of NiPtSi Silicided Junctions and Anomalous Grain-Incompatible Pt Network

Tsuchiaki¹,

Nishiyama²

2010

Jpn. J. Appl. Phys.

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Using highly reliable damage-free junctions, the effectiveness and limitation of Pt addition for the stabilization of thin NiSi films are accurately specified and practically formulated in terms of the thermally induced leakage. In addition to the thermal leakage, the unexpected emergence of initial leakage is also witnessed and attributed to the emission of Si interstitials during silicidation and the subsequent formation of boron interstitial clusters. Rapid evanescence of the initial leakage by post-annealing is also successfully demonstrated owing to the Pt-induced thermal stabilization. Moreover, unlike other Pt distributions considered so far, Pt atoms are revealed to concentrate in a distinctive manner, forming an anomalous in-layer web-like structure which even extends within single NiSi grains. This grain-incompatible Pt network is thought to be a remnant of Pt-aggregation around grain boundaries of an earlier metal-rich silicide phase (e.g., Ni 2 Si), incorporated and left intact in the final phase (i.e., NiSi). Such intermediate-phase Pt-rearrangement may have interfered with the phase transition sequence and reoriented the final NiSi grains to constitute a crystallographically stable and thermally robust interface structure, resulting in the effective stabilization by Pt addition. #

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Analysis of Anomalously Large Junction Leakage Current of Nickel Silicided N-Type Diffused Layer and Its Improvement

Cited by 18 publications

References 0 publications

Atomic-Layer-Deposition of SiO2 with Tris(Dimethylamino)Silane (TDMAS) and Ozone Investigated by Infrared Absorption Spectroscopy

Atomic-Layer-Deposition of SiO2 with Tris(Dimethylamino)Silane (TDMAS) and Ozone Investigated by Infrared Absorption Spectroscopy

Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

Leakage Reduction by Thermal Annealing of NiPtSi Silicided Junctions and Anomalous Grain-Incompatible Pt Network

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